CAJ | 학술논문

研究了球型半导体量子点中的电子拉曼散射.讨论了初态为导带全满,价带全空时的电子跃迁过程,给出了电子拉曼散射的跃迁选择定则.通过计算GaAs和CdS材料球型量子点中电子及空穴参与拉曼散射的微分散射截面,分别比较了电子和空穴的不同影响,发现电子对拉曼散射的贡献要远大于空穴的贡献;当选取不同量子点半径时,拉曼散射微分散射截面变化也非常明显;量子点尺寸不变的条件下,改变入射光子能量,可以发现,微分散射截面随入射光子能量增大而减小.
연구료구형반도체양자점중적전자랍만산사.토론료초태위도대전만,개대전공시적전자약천과정,급출료전자랍만산사적약천선택정칙.통과계산GaAs화CdS재료구형양자점중전자급공혈삼여랍만산사적미분산사절면,분별비교료전자화공혈적불동영향,발현전자대랍만산사적공헌요원대우공혈적공헌;당선취불동양자점반경시,랍만산사미분산사절면변화야비상명현;양자점척촌불변적조건하,개변입사광자능량,가이발현,미분산사절면수입사광자능량증대이감소.
The differential cross-section (DCS) for electron Raman scattering (ERS) in a semiconductor spherical quantum dots was presented. The process of ERS neglects the phonon-assisted transcription and the electron states were confined with GaAs or CdS quantum dot system. Single parabolic conduction and valence bands were assumed. The contribution caused by electron and hole was contrasted separately. The selection rules for the process were also studied. Singularities in the spectra are interpreted for various quantum sizes and different incident photon energies.