CAJ | 학술논문

以惰性盐为分散剂,通过直接氮化金属镓与氟化钙的混合物,在较低温度下(650℃)大量合成出角面截面型氮化镓纳米棒,大大低于以往文献报道的氮化温度(900℃以上).通过X射线衍射和电子显微镜等设备表征,可知所制得的产物为六方相氮化镓纳米棒,且纳米线沿着c轴择优生长；每根氮化镓纳米棒都具有菱形或三角形截面.由于本方法的制备温度低,导致了氮化镓纳米棒与硅基片的良好接触.场发射实验表明,该复合系统具有很低的开启电压(5.4 V/μm)和阈场(8.4 v／μM).
이타성염위분산제,통과직접담화금속가여불화개적혼합물,재교저온도하(650℃)대량합성출각면절면형담화가납미봉,대대저우이왕문헌보도적담화온도(900℃이상).통과X사선연사화전자현미경등설비표정,가지소제득적산물위륙방상담화가납미봉,차납미선연착c축택우생장；매근담화가납미봉도구유릉형혹삼각형절면.유우본방법적제비온도저,도치료담화가납미봉여규기편적량호접촉.장발사실험표명,해복합계통구유흔저적개계전압(5.4 V/μm)화역장(8.4 v／μM).
Inert salt - assisted route has been developed to prepare gallium nitride nanorods on Au-coated Si substrate through directly nitriding Ga - CaF2 mixture with NH3/N2 at 650 ℃,about 250) ℃ lower than previous literature reports.X - ray diffraction indicates the as - prepared products consist of hexagonal GaN nanorods and grow preferentially along c - axis.Scanning electron microscopy shows the as - prepared GaN nanorods having rhombic and triangular cross-sections.Quite good field emission property is obtained due to the natural integration of the GaN nanorods and the commonly - used Si substrate in this mild preparation,which suggests the potential applications.