发光学报
髮光學報
발광학보
CHINESE JOURNAL OF LUMINESCENCE
2012年
8期
808-811
,共4页
InAlGaN%光学声子%拉曼散射%MREI
InAlGaN%光學聲子%拉曼散射%MREI
InAlGaN%광학성자%랍만산사%MREI
InAlGaN%optical phonon%Raman scattering%MREI
利用拉曼散射实验方法对六方系InAlGaN晶体的光学声子进行了测量,同时利用修正随机元素同向位移模型对其光学声子与组分的关系进行了理论模拟.结果表明InAlGaN晶体的E1与A1光学声子分支都表现为单模行为,测量得到的InxGa0.45-xAl0.55N晶体的A1(LO)声子与计算结果一致.对InxAl0.42-xGa0.58N晶体的A1(LO)声子的计算结果与Cros的测量结果进行了对比,两者也相符.
利用拉曼散射實驗方法對六方繫InAlGaN晶體的光學聲子進行瞭測量,同時利用脩正隨機元素同嚮位移模型對其光學聲子與組分的關繫進行瞭理論模擬.結果錶明InAlGaN晶體的E1與A1光學聲子分支都錶現為單模行為,測量得到的InxGa0.45-xAl0.55N晶體的A1(LO)聲子與計算結果一緻.對InxAl0.42-xGa0.58N晶體的A1(LO)聲子的計算結果與Cros的測量結果進行瞭對比,兩者也相符.
이용랍만산사실험방법대륙방계InAlGaN정체적광학성자진행료측량,동시이용수정수궤원소동향위이모형대기광학성자여조분적관계진행료이론모의.결과표명InAlGaN정체적E1여A1광학성자분지도표현위단모행위,측량득도적InxGa0.45-xAl0.55N정체적A1(LO)성자여계산결과일치.대InxAl0.42-xGa0.58N정체적A1(LO)성자적계산결과여Cros적측량결과진행료대비,량자야상부.
The optical phonons are investigated experimentally by means of Raman scatterning and by the modified random element isodisplacement (MREI) model in hexagonal quaternary nitride-based crystals.A one-mode behavior of E1 and A1 branches is presented in our calculated results.The calculated A1 (LO) branches are almost consistent with our experimental data for InxGa0.45-x Al0.55 N crystals,and Cros's experimenatal results for InxAl0.42-x Ga0.58 N crystals.
