中国化学工程学报（英文版）
中國化學工程學報（英文版）
중국화학공정학보（영문판）
CHINESE JOURNAL OF CHEMICAL ENGINEERING
2005年
1期
48-50
,共3页
杨笛%余金中%陈少武%樊中朝%李运涛
楊笛%餘金中%陳少武%樊中朝%李運濤
양적%여금중%진소무%번중조%리운도
silicon%silicon dioxide%tetramethyl ammonium hydroxide%etching rate
An optimal concentration of the etching solution for deep etching of silicon, including 3% tetramethyl ammonium hydroxide and 0.3% (NH4)2S2O8, was achieved in this paper. For this etching solution, the etching rates (100) and (111) planes was about 34:1, and the etched surface was very smooth.
