物理化学学报
物理化學學報
물이화학학보
ACTA PHYSICO-CHIMICA SINICA
2008年
6期
977-980
,共4页
马涛%蒋亚东%于军胜%娄双玲%李璐%张清
馬濤%蔣亞東%于軍勝%婁雙玲%李璐%張清
마도%장아동%우군성%루쌍령%리로%장청
白色有机电致发光器件%星形六苯芴%HKEthFLYPh%能量传递
白色有機電緻髮光器件%星形六苯芴%HKEthFLYPh%能量傳遞
백색유궤전치발광기건%성형륙분물%HKEthFLYPh%능량전체
White organic light-emitting diode (WOLED)%Star-shaped hexafluorenylbenzene%HKEthFLYPh%Energy transfer
使用星形六苯芴类新材料1,2,3,4,5,6-hexakis(9,9-diethyl-9H-fluoren-2-y1)benzene(HKEthFLYPh)分别制备了三种不同结构的有机电致发光器件.在结构为indium-tin oxide(ITO)/NPB(40nm)/HKEthFLYPh(10nm)/Alq3(50nm)/Mg:Ag(200nm)的器件中,获得了两个电致发光谱峰分别位于435和530nm处的明亮白光.HKEthFLYPh足能量传输层;N,N'-bis-(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine(NPB)是空穴传输层和蓝色发光层;tris(8-hydroxyquinoline)aluminum(Alq3)是电子传输层和绿色发光层.结果表明,当驱动电压为15V时,器件的最大亮度达到8523cd·m-2;在5.5V时,器件达到最大流明效率为1.01m·W-1.在电压为9V时,CIE色坐标为(0.29,0.34).此外,通过改变HKEthFLYPh层的厚度,发现蓝色发射的相对强度随着HKEthFLYPh层厚度的增加而增强.
使用星形六苯芴類新材料1,2,3,4,5,6-hexakis(9,9-diethyl-9H-fluoren-2-y1)benzene(HKEthFLYPh)分彆製備瞭三種不同結構的有機電緻髮光器件.在結構為indium-tin oxide(ITO)/NPB(40nm)/HKEthFLYPh(10nm)/Alq3(50nm)/Mg:Ag(200nm)的器件中,穫得瞭兩箇電緻髮光譜峰分彆位于435和530nm處的明亮白光.HKEthFLYPh足能量傳輸層;N,N'-bis-(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine(NPB)是空穴傳輸層和藍色髮光層;tris(8-hydroxyquinoline)aluminum(Alq3)是電子傳輸層和綠色髮光層.結果錶明,噹驅動電壓為15V時,器件的最大亮度達到8523cd·m-2;在5.5V時,器件達到最大流明效率為1.01m·W-1.在電壓為9V時,CIE色坐標為(0.29,0.34).此外,通過改變HKEthFLYPh層的厚度,髮現藍色髮射的相對彊度隨著HKEthFLYPh層厚度的增加而增彊.
사용성형륙분물류신재료1,2,3,4,5,6-hexakis(9,9-diethyl-9H-fluoren-2-y1)benzene(HKEthFLYPh)분별제비료삼충불동결구적유궤전치발광기건.재결구위indium-tin oxide(ITO)/NPB(40nm)/HKEthFLYPh(10nm)/Alq3(50nm)/Mg:Ag(200nm)적기건중,획득료량개전치발광보봉분별위우435화530nm처적명량백광.HKEthFLYPh족능량전수층;N,N'-bis-(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine(NPB)시공혈전수층화람색발광층;tris(8-hydroxyquinoline)aluminum(Alq3)시전자전수층화록색발광층.결과표명,당구동전압위15V시,기건적최대량도체도8523cd·m-2;재5.5V시,기건체도최대류명효솔위1.01m·W-1.재전압위9V시,CIE색좌표위(0.29,0.34).차외,통과개변HKEthFLYPh층적후도,발현람색발사적상대강도수착HKEthFLYPh층후도적증가이증강.
Double-layer and triple-layer organic light-emitting diodes (OLEDs) were fabricated using a novel star-shaped hexafluorenylbenzene organic material, 1, 2, 3, 4, 5, 6-hexakis (9,9-diethyl-9H-fluoren-2-yl) benzene (HKEthFLYPh) as an energy transfer layer, N,N'-bis-(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (NPB) as a hole-transport layer (HTL) and blue emissive layer (EML), and tris (8-hydroxyquinoline) aluminum (Alq3) as an electron-transport layer (ETL) and green light-emitting layer. Bright white light was obtained with a triple-layer device structure of indium-tin-oxide (ITO)/NPB(40nm)/HKEthFLYPh(10nm)/Alq3(50nm)/Mg:Ag(200nm). A maximum luminance of 8523cd·m-2 at 15 V and a power efficiency of 1.0 lm·W-1 at 5.5V were achieved. The Commissions Internationale de L' Eclairage (CIE) coordinates of the device were (0.29, 0.34) at 9 V, which located in white light region. With increasing film thickness of HKEthFLYPh, light emission intensity from NPB increased compared to that of Alq3.