CAJ | 학술논문

基于SiC衬底成功研制X波段0.25um栅长带有г栅场板结构的AlGaN/GaN HEMT,对比T型栅结构器件,研究了г栅场板引入对器件直流、小信号及微波功率特性的影响.结果表明,г栅场板结构减小器件截止频率及振荡频率,但明显改善器件膝点电压和输出功率密度.针对场板长度分别为0.4、0.7、0.9、1.1 um,得出一定范围内增加场板长度,器件输出功率大幅度提高,并结合器件小信号模型提参结果分析原因.在频率8 GHz下,总栅宽1 mm,场板长度0.9um的器件,连续波输出功率密度7.11 W/mm,功率附加效率(PAE)35.31%,相应线性增益10.25 dB.
기우SiC츤저성공연제X파단0.25um책장대유г책장판결구적AlGaN/GaN HEMT,대비T형책결구기건,연구료г책장판인입대기건직류、소신호급미파공솔특성적영향.결과표명,г책장판결구감소기건절지빈솔급진탕빈솔,단명현개선기건슬점전압화수출공솔밀도.침대장판장도분별위0.4、0.7、0.9、1.1 um,득출일정범위내증가장판장도,기건수출공솔대폭도제고,병결합기건소신호모형제삼결과분석원인.재빈솔8 GHz하,총책관1 mm,장판장도0.9um적기건,련속파수출공솔밀도7.11 W/mm,공솔부가효솔(PAE)35.31%,상응선성증익10.25 dB.
Conventional T-shaped gate and ?-gate field-plated structures were demonstrated and compared to each other from DC, RF and microwave power characterization. The results show that due to Γ-gate field plate, degradation in the value of unity current gain frequency fT and maximum frequency of oscillation f<,max> are observed, but there is a significant improvement in knee-vohage and output power density.Also, 0.25 um gate-length AlGaN/GaN HEMTs with varying Γ-gate field-plate lengths of 0.4, 0.7, 0.9 and 1.1 um were fabricated on SiC substrates. With the increase of field-plate length within the optimum,output power density is improved dramatically, which is demonstrated by equivalent circuit analysis. At 8 GHz, a continuous-wave output power density is 7.11 W/mm with 35.31% power-added effieieney and 10.25 dB corresponding linear gain at V<,ds> =40 V for an 0.25um? mm device with field-plate length of 0.9 um.