发光学报
髮光學報
발광학보
CHINESE JOURNAL OF LUMINESCENCE
2012年
1期
72-76
,共5页
肖静%邓振波%谭静芳%杨兆华
肖靜%鄧振波%譚靜芳%楊兆華
초정%산진파%담정방%양조화
有机电致发光器件%光谱展宽%LiF%激子
有機電緻髮光器件%光譜展寬%LiF%激子
유궤전치발광기건%광보전관%LiF%격자
organic electroluminescent device%spectrum expanding%LiF%excitons
将LiF插入到发光层Alq3中,制备了有机电致发光器件(OLED),其器件的结构为:ITO/NPB(45 nm)/Alq3(xnm)/LiF(0.3 nm)/Alq3[(45-x)nm]/Al(150 nm).发现器件的电致发光谱(Electroluminescence spectra,EL)有非常明显的展宽现象,这为白光器件的制备提供了一条简单的途径.通过对比LiF在Alq3中不同厚度处的发光谱,发现在x=10时谱线展宽最显著,器件最大亮度在22 V时达到8 260 cd/m2,最大效率可达4.83 cd/A,并对其光谱展宽的机理及器件特性进行了分析.
將LiF插入到髮光層Alq3中,製備瞭有機電緻髮光器件(OLED),其器件的結構為:ITO/NPB(45 nm)/Alq3(xnm)/LiF(0.3 nm)/Alq3[(45-x)nm]/Al(150 nm).髮現器件的電緻髮光譜(Electroluminescence spectra,EL)有非常明顯的展寬現象,這為白光器件的製備提供瞭一條簡單的途徑.通過對比LiF在Alq3中不同厚度處的髮光譜,髮現在x=10時譜線展寬最顯著,器件最大亮度在22 V時達到8 260 cd/m2,最大效率可達4.83 cd/A,併對其光譜展寬的機理及器件特性進行瞭分析.
장LiF삽입도발광층Alq3중,제비료유궤전치발광기건(OLED),기기건적결구위:ITO/NPB(45 nm)/Alq3(xnm)/LiF(0.3 nm)/Alq3[(45-x)nm]/Al(150 nm).발현기건적전치발광보(Electroluminescence spectra,EL)유비상명현적전관현상,저위백광기건적제비제공료일조간단적도경.통과대비LiF재Alq3중불동후도처적발광보,발현재x=10시보선전관최현저,기건최대량도재22 V시체도8 260 cd/m2,최대효솔가체4.83 cd/A,병대기광보전관적궤리급기건특성진행료분석.
A novel organic electroluminescent device was fabricated by interposing a thin LiF layer in Alq3 layer in this work.The structure of the device is ITO/NPB(45 nm)/Alq3(x nm)/LiF(0.3 nm)/Alq3[(45-x)nm]/ Al(150 nm).All the devices(x =5,10,15)showed expanded EL spectra,and the spectrum expanding is more obvious in the device with x =10 than the others.The highest brightness of this device reached 8 260 cd/m2 at a fixed bias of 22 V.The spectra contain tricolor,so this is a simple method to realize white light emitting.We also elucidated the mechanism for expanded EL spectra and investigated the properties of these devices.