CAJ | 학술논문

通过瞬态反射各向异性谱和瞬态反射谱在线监测和研究了AlxGa1-xAs的生长过程,利用金属有机化合物汽相淀积技术在GaAs (001)衬底上生长了多层AlxGa1-xAs结构.选择最适合在线监测生长过程的探测光能量,在此探测光能量处所得到的反射各向异性谱和反射谱的信号在生长过程中有很明显的振荡行为产生.研究发现,通过瞬态反射各向异性谱可以很好地分辨出由表面引起的光学各向异性和由界面处引起的光学各向异性,能够得到界面处形成缺陷的信息,并且发现了反射各向异性谱和反射谱的信号随着铝组分的不同而发生有规律的变化.
통과순태반사각향이성보화순태반사보재선감측화연구료AlxGa1-xAs적생장과정,이용금속유궤화합물기상정적기술재GaAs (001)츤저상생장료다층AlxGa1-xAs결구.선택최괄합재선감측생장과정적탐측광능량,재차탐측광능량처소득도적반사각향이성보화반사보적신호재생장과정중유흔명현적진탕행위산생.연구발현,통과순태반사각향이성보가이흔호지분변출유표면인기적광학각향이성화유계면처인기적광학각향이성,능구득도계면처형성결함적신식,병차발현료반사각향이성보화반사보적신호수착려조분적불동이발생유규률적변화.
The MOCVD growth of AlxGa1-xAs for application in high-power laser diodes was studied by using time resolved reflectance anisotropy spectroscopy (RAS) and normalized reflectance (NR) were studied.Multi-layer AlxGa1-x As structures with different Al compisition were grown on GaAs (001) substrates.The most suitable photon energy for monitoring the growth process was investigated.The NR and RAS signals at photon energy near the fundamental band gap showed an oscillatory behavior during the growth.The different contribution of surface-induced optical anisotropy and interface-induced optical anisotropy could be distinguished in situ by RAS transient spectra.The intensities of the RAS and NR signals were strongly dependent on the aluminium composition.