CAJ | 학술논문

报道了用1064nm激光脉冲触发半绝缘GaAs光电导开关的一种奇特光电导现象.GaAs光电导开关的电极间隙为4mm,当偏置电场分别为2.0和6.0kV/cm时,用脉冲能量为0.8mJ,宽度为5ns的激光触发开关,观察到开关输出的线性和非线性工作模式.当偏置电场增至9.5kV/cm,触发光脉冲能量在0.5～1.0mJ范围时,观察到奇特的光电导现象,开关先输出一个线性电脉冲,经过大约20～250ns时间延迟后,触发光脉冲消失,开关又输出一个非线性电脉冲.这一奇特光电导现象的物理机制与半绝缘GaAs中的反位缺陷和吸收机制有关.分析计算了线性与非线性电脉冲之间的延迟时间,结果与实验观察基本吻合.
보도료용1064nm격광맥충촉발반절연GaAs광전도개관적일충기특광전도현상.GaAs광전도개관적전겁간극위4mm,당편치전장분별위2.0화6.0kV/cm시,용맥충능량위0.8mJ,관도위5ns적격광촉발개관,관찰도개관수출적선성화비선성공작모식.당편치전장증지9.5kV/cm,촉발광맥충능량재0.5～1.0mJ범위시,관찰도기특적광전도현상,개관선수출일개선성전맥충,경과대약20～250ns시간연지후,촉발광맥충소실,개관우수출일개비선성전맥충.저일기특광전도현상적물리궤제여반절연GaAs중적반위결함화흡수궤제유관.분석계산료선성여비선성전맥충지간적연지시간,결과여실험관찰기본문합.
The peculiar photoconduction in semi-insulating GaAs photoconductive switch being triggered by 1064nm laser pulse is reported.The gap between two electrodes of the switch is 4mm.When it is triggered by laser pulse with energy of 0.8mJ and the pulse width of 5ns,and operated at biased electric field of 2.0 and 6.0kV/cm,both linear and nonlinear modes of the switch are observed respectively.Whereas the biased electric field adds to 9.5kV/cm,and the triggered laser is in range of 0.5～1.0mJ,the peculiar performed characteristic is observed:the switch gives a linear waveform firstly,and then after a delay-time of about 20～250ns,it outputs a nonlinear waveform again.The physical mechanism of this specific phenomenon is associated with the anti-site-defects of semi-insulating GaAs and two-step-single-photon absorption.The delay time between linear waveform and nonlinear waveform is calculated,and the result matches the experiments.