CAJ | 학술논문

对ZrN扩散阻挡层与SiCON低k介质(k=2.35)的界面特性进行了XPS分析.实验结果表明,刚淀积的样品中ZrN与SiCON薄膜之间有一定程度的相互扩散并形成界面区.在界面区内Zr与SiCON薄膜中O及N元素相互作用成键,表明ZrN/SiCON界面有良好的黏附性能.400℃退火后,除受表面氧化作用干扰的O和N元素外,未观察到界面中其他元素Zr,Si和C有新的扩散,说明界面稳定性很好.
대ZrN확산조당층여SiCON저k개질(k=2.35)적계면특성진행료XPS분석.실험결과표명,강정적적양품중ZrN여SiCON박막지간유일정정도적상호확산병형성계면구.재계면구내Zr여SiCON박막중O급N원소상호작용성건,표명ZrN/SiCON계면유량호적점부성능.400℃퇴화후,제수표면양화작용간우적O화N원소외,미관찰도계면중기타원소Zr,Si화C유신적확산,설명계면은정성흔호.
The interface characteristic between thin ZrN diffusion barrier layer and SiCON low dielectric constant (k = 2.35) film were investigated by X-ray photoelectron spectroscopy (XPS). The experimental data show that certain degree inter-diffusions occur between ZrN layer and SiCON film for the as-deposited sample, resulting in the formation of an interphase in the ZrN/SiCON contact system. Within the interphase, Zr interacted with O as well as N from SiCON film as a result multiple bonds are formed. This indicates good adhesion between ZrN layer and SiCON film. After 400℃ annealing, no further element diffusions of Zr, Si or C are observed, except O and N whose contents are confused due to the sample surface oxidation.