功率增益截止频率为183GHz的In0.53Ga0.47As/In0.52Al0.48As HEMTs
공솔증익절지빈솔위183GHz적In0.53Ga0.47As/In0.52Al0.48As HEMTs
In0.53Ga0.47As/In0.52Al0.48As HEMTs with fmax of 183GHz
  • 万方数据
    半导体学报 반도체학보
    CHINESE JOURNAL OF SEMICONDUCTORS
    2007年 12期 1860-1863 ,共4页

    刘亮%张海英%尹军舰%李潇%杨浩%徐静波%宋雨竹%张健%牛洁斌%刘训春

    류량%장해영%윤군함%리소%양호%서정파%송우죽%장건%우길빈%류훈춘

    最大振荡频率/功率增益截止频率%高电子迁移率晶体管%InGaAs/InAlAs%InP 最大振盪頻率/功率增益截止頻率%高電子遷移率晶體管%InGaAs/InAlAs%InP
    최대진탕빈솔/공솔증익절지빈솔%고전자천이솔정체관%InGaAs/InAlAs%InP
    maximum oscillation frequency/power-gain cutoff frequency%high electron mobility transistor%InGaAs/InAlAs%InP
    通过合理的外延层材料结构设计和改进的器件制备工艺,制备出功率增益截止频率(fmax)为183GHz的晶格匹配InP基In0.53Ga0.47As-In0.52Al0.48As HEMT.该fmax为国内HEMT器件最高值.还报道了器件的结构、制备工艺以及器件的直流和高频特性.
    통과합리적외연층재료결구설계화개진적기건제비공예,제비출공솔증익절지빈솔(fmax)위183GHz적정격필배InP기In0.53Ga0.47As-In0.52Al0.48As HEMT.해fmax위국내HEMT기건최고치.환보도료기건적결구、제비공예이급기건적직류화고빈특성.
    By epitaxial layer structure design and key fabrication process optimization,a lattice-matched InP-based In0.53Ga0.47As-In0.52Al0.48As HEMT with an ultra high maximum oscillation frequency (fmax) of 183GHz was fabricated.The fmax is the highest value for HEMTs in China.Also,the devices are reported,including the device structure,the fabrication process,and the DC and RF performances.
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