CAJ | 학술논문

在蓝宝石衬底上用MOCVD技术生长的AlGaN/GaN结构上制作出0.25μm栅长的高电子迁移率功率晶体管.0.25μm栅长的单指器件测到峰值跨导为250mS/mm,特征频率为77GHz.功率器件的最大电流密度达到1.07A/mm.8GHz频率下在片测试80×10μm栅宽器件的输出功率为27.04dBm,同时功率附加效率达到26.5%.
재람보석츤저상용MOCVD기술생장적AlGaN/GaN결구상제작출0.25μm책장적고전자천이솔공솔정체관.0.25μm책장적단지기건측도봉치과도위250mS/mm,특정빈솔위77GHz.공솔기건적최대전류밀도체도1.07A/mm.8GHz빈솔하재편측시80×10μm책관기건적수출공솔위27.04dBm,동시공솔부가효솔체도26.5%.
MOCVD-grown 0.25μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated on sapphire substrates. A peak extrinsic transconductance of 250mS/mm and a unity current gain cutoff frequency (fT) of 77GHz are obtained for a 0.25μm gate-length single finger device. These power devices exhibit a maximum drain current density as high as 1.07A/mm. On-chip testing yielded a continuous-wave output power of 27. 04dBm at 8GHz with an associated power-added efficiency of 26. 5% for an 80 × 10μm device.