CAJ | 학술논문

用化学腐蚀剂腐蚀出样品的(0001)表面上的位错蚀坑，在原生态和退火样品的对应径向线上测量了位错腐蚀坑的密度分布。由位错腐蚀坑的形成理论确定出原生态晶体中很可能有3种位错类型，即Burgers矢量b=1/3<1120>，1/3-<1101>和<1010>的位错线，然而长时间在还原性高温气氛中的退火难以降低晶体中的总的位错密度。在晶体的放肩至等径生长阶段，沿着晶体的生长方向，晶体棒中心的位错密度由高变低，这显示出：在晶体的放肩至等径生长的转变过程中，生长界面发生了翻转，由凹形界面转变为凸形界面，位错线随之从晶体棒的中心向边缘发散。
용화학부식제부식출양품적(0001)표면상적위착식갱，재원생태화퇴화양품적대응경향선상측량료위착부식갱적밀도분포。유위착부식갱적형성이론학정출원생태정체중흔가능유3충위착류형，즉Burgers시량b=1/3<1120>，1/3-<1101>화<1010>적위착선，연이장시간재환원성고온기분중적퇴화난이강저정체중적총적위착밀도。재정체적방견지등경생장계단，연착정체적생장방향，정체봉중심적위착밀도유고변저，저현시출：재정체적방견지등경생장적전변과정중，생장계면발생료번전，유요형계면전변위철형계면，위착선수지종정체봉적중심향변연발산。
The dislocation lines in doped-Ti sapphire crystal and the effect of annealing on them are reported in this paper. By the aid of chemical etching method, the outcrops of dislocation lines are revealed in (0001) surface of doped-Ti sapphire crystal (Ti3+: Al2O3). The density distributions of dislocation lines were measured along with three corresponding radial lines in (0001) surface of the sample before and after annealing. Taking advantage of the forming thcory of dislocation etch-pit, three types of dislocation lines in as-grown crystal can be indicated, i.e. b = 1/3<1120>,1/3<1101> and <1010>. The annealing on crystal of long time in high temperature H2 atmosphere has effect on the first type of the dislocation line, but nearly no effect on other types of the dislocation lines. Therefore, the annealing on crystal hardly reduces the total density of the dislocation lines. During shoulder to equal radius growth, the densities of the dislocation lines at the center of crystal boule decrease from high to low along growth direction. During the following equal radius growth of crystal, the densities of the dislocation lines along radial direction of boule increase all through from low to high. This reveals the growth interface reversing fron concave to convex.