压电与声光
壓電與聲光
압전여성광
PIEZOELECTRICS & ACOUSTOOPTICS
2002年
4期
292-294
,共3页
李兴教%王宁章%鲍军波%陈涛%冯汉华%袁润章%LI Shao-ping
李興教%王寧章%鮑軍波%陳濤%馮漢華%袁潤章%LI Shao-ping
리흥교%왕저장%포군파%진도%풍한화%원윤장%LI Shao-ping
多层铁电薄膜%内建电压%刻印失效%非对称的整流特性
多層鐵電薄膜%內建電壓%刻印失效%非對稱的整流特性
다층철전박막%내건전압%각인실효%비대칭적정류특성
利用准分子激光在p型硅薄片上淀积了多层铁电薄膜BIT/PZT/BIT、PZT/BIT和BIT.讨论了多层铁电薄膜界面内建电压,其中Au/BIT/PZT/TBIT/p-Si(100)的ΔVb最小而Au/BIT/p-Si(100)的ΔVb最大,但Au/BIT/PZT/TBIT/p-Si(100)的ΔVb与Au/BIT/p-Si(100)的ΔVb相差不多.Au/BIT/PZT/TBIT/p-Si(100)的I-V特性曲线非对称的整流特性和P-V回线的刻印失效是最小的而Au/BIT/p-Si(100)的则是最大的.
利用準分子激光在p型硅薄片上澱積瞭多層鐵電薄膜BIT/PZT/BIT、PZT/BIT和BIT.討論瞭多層鐵電薄膜界麵內建電壓,其中Au/BIT/PZT/TBIT/p-Si(100)的ΔVb最小而Au/BIT/p-Si(100)的ΔVb最大,但Au/BIT/PZT/TBIT/p-Si(100)的ΔVb與Au/BIT/p-Si(100)的ΔVb相差不多.Au/BIT/PZT/TBIT/p-Si(100)的I-V特性麯線非對稱的整流特性和P-V迴線的刻印失效是最小的而Au/BIT/p-Si(100)的則是最大的.
이용준분자격광재p형규박편상정적료다층철전박막BIT/PZT/BIT、PZT/BIT화BIT.토론료다층철전박막계면내건전압,기중Au/BIT/PZT/TBIT/p-Si(100)적ΔVb최소이Au/BIT/p-Si(100)적ΔVb최대,단Au/BIT/PZT/TBIT/p-Si(100)적ΔVb여Au/BIT/p-Si(100)적ΔVb상차불다.Au/BIT/PZT/TBIT/p-Si(100)적I-V특성곡선비대칭적정류특성화P-V회선적각인실효시최소적이Au/BIT/p-Si(100)적칙시최대적.
