半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2000年
5期
417-420
,共4页
徐遵图%杨国文%张敬明%马骁宇%徐俊英%沈光地%陈良惠
徐遵圖%楊國文%張敬明%馬驍宇%徐俊英%瀋光地%陳良惠
서준도%양국문%장경명%마효우%서준영%침광지%진량혜
quantum well laser%high efficiency%Al-free PACC: 4255P%6855%7856%8115HCLC number: TN248.4 Document code: A Article ID: 0253-4177(2000)05-0417-04
High efficiency Al-free InGaAs/InGaAsP/InGaP lasers emitting at 980nm are fabricated by MOCVD. The lasers exhibit a high internal quantum efficiency of 95 % and a low internal loss of 1.8 cm-1. Low threshold current density of 190A/cm2 and high slope efficiency of 1.06W/A are obtained by lasers with 800μm cavitylength. A high characteristic temperature 210C is also obtained by replacing the GaAs barrier with high-bandgap InGaAsP barrier. The measured vertical and parallel divergence angle are 40° and 8°, respectively.
