CAJ | 학술논문

利用射频磁控溅射方法,在n型(100)Si基底上沉积了氮化硼薄膜(BN).通过分析电流密度-电场强度曲线,发现BN薄膜的场发射特性与基底偏压影响很大,基底偏压为-140V时BN薄膜样品场发射特性要好于其它样品,阈值电场低于8V/μm. F-N曲线表明:电子是通过隧道效应克服BN薄膜表面势垒发射到真空的.
이용사빈자공천사방법,재n형(100)Si기저상침적료담화붕박막(BN).통과분석전류밀도-전장강도곡선,발현BN박막적장발사특성여기저편압영향흔대,기저편압위-140V시BN박막양품장발사특성요호우기타양품,역치전장저우8V/μm. F-N곡선표명:전자시통과수도효응극복BN박막표면세루발사도진공적.
Boron nitride(BN) thin films were prepared on Si(100) at different substrate bias by r.f. magnetron sputtering physical vapor deposition(PVD). It was found that the field emission characteristics of thin BN films depended evidently on substrate bias by using current density versus electric field(J-E) curves. A turn-on electric field of 8V/μm is obtained for the BN film deposited at a substrate bias of -140V. It is shown that electrons are emitted from BN to vacuum tunneling through the potential barrier at the surface of the BN thin film by using F-N curves.