上海师范大学学报(自然科学版)
上海師範大學學報(自然科學版)
상해사범대학학보(자연과학판)
JOURNAL OF SHANGHAI TEACHERS UNIVERSITY(NATURAL SCIENCES)
2006年
2期
47-50
,共4页
彭子飞%余军保%徐捷%周亚丽%刘恒
彭子飛%餘軍保%徐捷%週亞麗%劉恆
팽자비%여군보%서첩%주아려%류항
Zn2SiO4:Dy3+%制备%长余辉%陷阱能级
Zn2SiO4:Dy3+%製備%長餘輝%陷阱能級
Zn2SiO4:Dy3+%제비%장여휘%함정능급
Zn2SiO4:Dy3+%preparation%long afterglow%trapping levels
以Zn2SiO4为基质,用高温固相法(ss),sol-gel法(sg)制备得到Zn2SiO4:Dy3+长余辉发光材料,该发光材料的制备及长余辉发光性能至今尚未见到文献报道.由该发光材料的激发谱发现,其在紫外的235~350nm范围有吸收,其发射光谱表明,在紫光(378nm,393nm)、橙光(595nm)、红光(691nm)部位有发射峰.通过对比掺杂与未掺杂样品发射光谱,说明样品发光是由基质Zn2SiO4产生的,Dy3+的掺杂只是使材料形成了陷阱能级进而发出长余辉,还阐述了Zn2SiO4:Dy3+的可能发光机理.
以Zn2SiO4為基質,用高溫固相法(ss),sol-gel法(sg)製備得到Zn2SiO4:Dy3+長餘輝髮光材料,該髮光材料的製備及長餘輝髮光性能至今尚未見到文獻報道.由該髮光材料的激髮譜髮現,其在紫外的235~350nm範圍有吸收,其髮射光譜錶明,在紫光(378nm,393nm)、橙光(595nm)、紅光(691nm)部位有髮射峰.通過對比摻雜與未摻雜樣品髮射光譜,說明樣品髮光是由基質Zn2SiO4產生的,Dy3+的摻雜隻是使材料形成瞭陷阱能級進而髮齣長餘輝,還闡述瞭Zn2SiO4:Dy3+的可能髮光機理.
이Zn2SiO4위기질,용고온고상법(ss),sol-gel법(sg)제비득도Zn2SiO4:Dy3+장여휘발광재료,해발광재료적제비급장여휘발광성능지금상미견도문헌보도.유해발광재료적격발보발현,기재자외적235~350nm범위유흡수,기발사광보표명,재자광(378nm,393nm)、등광(595nm)、홍광(691nm)부위유발사봉.통과대비참잡여미참잡양품발사광보,설명양품발광시유기질Zn2SiO4산생적,Dy3+적참잡지시사재료형성료함정능급진이발출장여휘,환천술료Zn2SiO4:Dy3+적가능발광궤리.
In this paper, using Zn2SiO4 as the host material doped Dy3+ , the long afterglow material Zn2SiO4:Dy3 + has been prepared by high temperature solid state method and sol - gel method. The preparation and long afterglow luminescent property of this luminescent material hasn't been reported in literature, so far. The results showed that Zn2SiO4: Dy3+ can be excited at the range of 230 ~350nm, and emited lights in violet area (378nm, 393nm),orange light (595nm), and red light (691nm) zones. In comparison with the emission spectra of doped and undoped samples, it has been found that the luminescent peak positions of the doped sample can be assigned to the matrix Zn2SiO4, and doped Dy3+ in sample just leads to the formation of trapping levels and then the doped sample emits long afterglow. The possible luminescent mechanism of Zn2 SiO4: Dy3 + is also discussed in this paper.