CAJ | 학술논문

合成了高稳定性蓝光主体材料9,10-二萘蒽(ADN),研究材料纯化对合成材料光电性能的影响.为进一步分析材料经升华提纯对有机电致发光器件性能的影响,以提纯前后ADN为发光层,以NPB 为空穴传输层,分别制作双层器件Ⅰ(提纯前)和器件Ⅱ(提纯后),器件结构为ITO(100 nm)/NPB(40 nm)/ADN(30 nm)/Alq3(20 nm)/LiF (1 nm) /Al (100 nm), 结果表明提纯后材料PL(Photoluminescence)光谱蓝移了2 nm,半峰全宽54.2 nm,与提纯前一致;杂质影响载流子注入效率和迁移率,对器件光电性能有显著影响,纯化前后器件最大电流效率由1.5 cd/A上升至2.5 cd/A;器件Ⅱ色纯度有较大提高,CIE色坐标由器件Ⅰ(0.15,0.10)移至(0.15, 0.06).实验结果表明材料提纯是优化器件性能的有效手段之一.
합성료고은정성람광주체재료9,10-이내은(ADN),연구재료순화대합성재료광전성능적영향.위진일보분석재료경승화제순대유궤전치발광기건성능적영향,이제순전후ADN위발광층,이NPB 위공혈전수층,분별제작쌍층기건Ⅰ(제순전)화기건Ⅱ(제순후),기건결구위ITO(100 nm)/NPB(40 nm)/ADN(30 nm)/Alq3(20 nm)/LiF (1 nm) /Al (100 nm), 결과표명제순후재료PL(Photoluminescence)광보람이료2 nm,반봉전관54.2 nm,여제순전일치;잡질영향재류자주입효솔화천이솔,대기건광전성능유현저영향,순화전후기건최대전류효솔유1.5 cd/A상승지2.5 cd/A;기건Ⅱ색순도유교대제고,CIE색좌표유기건Ⅰ(0.15,0.10)이지(0.15, 0.06).실험결과표명재료제순시우화기건성능적유효수단지일.
Organic light-emitting diode (OLED) has attracted considerable attention due to their unique image quality and market potentials in display application. For the full-color display applications, it is essential to deliver the primary RGB emitters with high luminous efficiency, saturated color chromaticity, among which 9, 10-Di (2-naphthyl) anthracene (ADN) is one of the stable and pure blue emitters. However, little attention has been paid to the influences of ADNs purification on the electroluminescent(EL) performance.Synthesis and purification of ADN were studied. The photoluminescence (PL) and electroluminescence (EL) spectra of ADN synthesized and purified are investigated, respectively. The PL spectrum of ADN purified exhibits an emitting peak at 434 nm with a full-width at half-maxium (FWHM) of 54.2 nm, while the rough material without purification is red shifted to 436 nm with the same FWHM of 54.2 nm. Organic light-emitting diodes (OLEDs) with a structure of indium tin oxide (ITO) (100 nm)/N,N′-biphenyl-N,N′-bis-(1-naphenyl)-［1,1′- biphenyl］-4,4′-diamine (NPB)(40 nm)/ADN（30 nm）/tris(8-quinolinolate)aluminum(Alq3)(20 nm)/LiF(1 nm)/Al(100 nm) are fabricated, where the rough and purified ADN are used as emitting layers in DiodeⅠand in DiodeⅡ, respectively, NPB is used as hole transport layer, Alq3 as an electronic transport layer in this structure. Little diffe-rence of the maximum peak of EL spectra between two Diodes is found, which is 432 nm in DiodeⅠand 433 nm in DiodeⅡ, a current efficiency of 2.5 cd/A with the Commission Internationale d′Eclairage (CIE) coordinates of（x=0.15，y=0.06） is got in DiodeⅡ while only a current efficiency of 1.5 cd/A with CIE of (x=0.15，y=0.10) is found in DiodeⅠ. It is supposed that the purification of the ADN rough material has a positive effect on the EL characteristics of the OLED， meanwhile with fewer impacts on the PL spectra. Therefore the purification can be improved the performance of OLED greatly.