CAJ | 학술논문

由于在研究SiC晶体缺陷对器件性能的影响的过程中,表征材料缺陷的常用的方法是破坏性的,因此寻找一种无损的测试方法对缺陷进行有效的表征显得尤为重要.基于阴极荧光(CL)的工作原理对4H-SiC同质外延材料的晶体缺陷进行了无损测试研究.结果发现利用阴极荧光可以观测到品体内部的堆垛层错、刃位错和螺位错以及基面位错,其阴极荧光图中的形貌分别为直角二三角形、点状和短棒状.因此该方法成为SiC晶体缺陷的无损表征时的一种有效的测试方法.如果利用该方法对材料的衬底和外延层缺陷分别进行观测就能建立起衬底和外延层缺陷之间的某种联系,另外对器件工作前后的缺陷进行表征,建立器件工作前后缺陷之间的联系,就可以进一步地研究材料缺陷对器件性能影响的问题.
유우재연구SiC정체결함대기건성능적영향적과정중,표정재료결함적상용적방법시파배성적,인차심조일충무손적측시방법대결함진행유효적표정현득우위중요.기우음겁형광(CL)적공작원리대4H-SiC동질외연재료적정체결함진행료무손측시연구.결과발현이용음겁형광가이관측도품체내부적퇴타층착、인위착화라위착이급기면위착,기음겁형광도중적형모분별위직각이삼각형、점상화단봉상.인차해방법성위SiC정체결함적무손표정시적일충유효적측시방법.여과이용해방법대재료적츤저화외연층결함분별진행관측취능건립기츤저화외연층결함지간적모충련계,령외대기건공작전후적결함진행표정,건립기건공작전후결함지간적련계,취가이진일보지연구재료결함대기건성능영향적문제.
As the general method of defect characterization is destructive,during the current research on the effect of defect on device,nondestructive defect characterization is important especially.The defects of 4H-SiC homoepitaxial layer had been observed and studied,based on the principle of cathodoluminescence(CL).The results show that the intrinsic stacking faults (SFs),threading edge dislocations(TEDs),threading screw dislocations(TSDs) and basal plane dislocations(BPDs) can be observed by cathodoluminescence.The shape are rightangle triangle,dot and stick,repectively.So this method is available for nondestructive defect characterization.The correlation between 4H-SiC substrate defects and epilayer defects will be established if we characterize the defects of 4H-SiC wafers with and without an epilayer.In addition,if we characterize the defects of device before and after operation,the correlation between SiC defects of the devices before and after operation will be established,too.