CAJ | 학술논문

报道了控制热处理过程中含氢非晶硅中纳米硅颗粒大小的一种新方法.用喇曼散射、X射线衍射和计算机模拟,发现在非晶硅中所形成的纳米硅颗粒的大小,随着热退火过程中升温速率的变化而变化.在退火过程中,若非晶硅薄膜升温速率较高(～100℃/s),则所形成纳米硅粒的大小在1.6～15 nm;若非晶硅薄膜升温速率较低(～1℃/s),则纳米硅粒大小在23～46nm.根据晶体生长理论,讨论了升温速率的高低与所形成的纳米硅颗粒大小的关系.
보도료공제열처리과정중함경비정규중납미규과립대소적일충신방법.용나만산사、X사선연사화계산궤모의,발현재비정규중소형성적납미규과립적대소,수착열퇴화과정중승온속솔적변화이변화.재퇴화과정중,약비정규박막승온속솔교고(～100℃/s),칙소형성납미규립적대소재1.6～15 nm;약비정규박막승온속솔교저(～1℃/s),칙납미규립대소재23～46nm.근거정체생장이론,토론료승온속솔적고저여소형성적납미규과립대소적관계.
A new method to control the size of nanoscale silicon that has been grown in thermally annealed hydrogenated amorphous silicon (a-Si:H) films is reported. Using the characterizing techniques of micro-Raman scattering, X-ray diffraction and computer simulation, Found that nanoscale silicon particles can be grown in thermally annealed a-Si:H films and the sizes of the formed silicon particles change with the temperature ramp rate in thermal annealing processes.When the a-Si:H films have been annealed with high ramp rate (～100 ℃/second), the sizes of nanoscale silicon particles are in the range of 1.6～15 nm. In contrast, if the a-Si:H films have been annealed with low ramp rate (～1 ℃/second), the sizes of nanoscale silicon particles are in the range of 23～46 nm. In the light of fractal theory and the theory of crystal nucleation and growth, we have discussed the effect of temperature ramp rate on the sizes of the formed silicon particles.