电子元件与材料
電子元件與材料
전자원건여재료
ELECTRONIC COMPONENTS & MATERIALS
2010年
1期
11-14
,共4页
热电材料%ZnO%等电子掺杂%功率因子
熱電材料%ZnO%等電子摻雜%功率因子
열전재료%ZnO%등전자참잡%공솔인자
thermoelectric materials%zinc oxide%isoelectronic doping%power factor
采用固相反应法制备了ZnO_(1-x)S_x块体材料(0≤x≤0.05);通过对样品X射线衍射谱(XRD)、电导率和Seebeck系数的测量,研究了S掺杂对ZnO晶体结构及热电性能的影响.结果表明:所有试样均为六方纤锌矿结构.在573 K时,ZnO_(1-x)S_x(0＜x≤0.05)材料的电导率(1 723 S·m~(-1))比ZnO材料的电导率(3.02 S·m~(-1))大得多,同时二者的Seebeck系数相差较小.在1 073 K下,试样ZnO_(0.97)S_(0.03)具有最高的功率因子2.5×10~(-4) Wm~(-1)K~(-2),是同温度下未掺杂ZnO功率因子的10倍.
採用固相反應法製備瞭ZnO_(1-x)S_x塊體材料(0≤x≤0.05);通過對樣品X射線衍射譜(XRD)、電導率和Seebeck繫數的測量,研究瞭S摻雜對ZnO晶體結構及熱電性能的影響.結果錶明:所有試樣均為六方纖鋅礦結構.在573 K時,ZnO_(1-x)S_x(0＜x≤0.05)材料的電導率(1 723 S·m~(-1))比ZnO材料的電導率(3.02 S·m~(-1))大得多,同時二者的Seebeck繫數相差較小.在1 073 K下,試樣ZnO_(0.97)S_(0.03)具有最高的功率因子2.5×10~(-4) Wm~(-1)K~(-2),是同溫度下未摻雜ZnO功率因子的10倍.
채용고상반응법제비료ZnO_(1-x)S_x괴체재료(0≤x≤0.05);통과대양품X사선연사보(XRD)、전도솔화Seebeck계수적측량,연구료S참잡대ZnO정체결구급열전성능적영향.결과표명:소유시양균위륙방섬자광결구.재573 K시,ZnO_(1-x)S_x(0＜x≤0.05)재료적전도솔(1 723 S·m~(-1))비ZnO재료적전도솔(3.02 S·m~(-1))대득다,동시이자적Seebeck계수상차교소.재1 073 K하,시양ZnO_(0.97)S_(0.03)구유최고적공솔인자2.5×10~(-4) Wm~(-1)K~(-2),시동온도하미참잡ZnO공솔인자적10배.
ZnO_(1-x)S_x (0≤x≤0.05) bulk samples were fabricated by the solid state reaction method.The effects of S doping on the crystalline structure and thermoelectric properties of ZnO were investigated through measuring the X-ray diffraction (XRD) spectra,electrical conductivity and Seebeck coefficient (thermoelectric power,S) of obtained ZnO samples.The results show that all samples adopt the hexagonal wurtzite structure.At 573 K,the electrical conductivities of ZnO_(1-x)S_x (0＜x≤0.05) (1 723 S·m~(-1)) are much higher than that of neat ZnO (3.02 S·m~(-1)),while the difference in Seebeck coefficient amongst all samples is small.At 1073K,the power factor of ZnO_(0.97)S_(0.03) with a value of 2.5×10~(-4) Wm~(-1)K~(-2) is largest among all samples and is 10 times as large as that of ZnO.
