CAJ | 학술논문

介绍了一个基于0.18μm标准CMOS工艺,可用于零中频UHFRFID(射频识别)接收机系统的900MHz低噪声放大器.根据射频识别系统的特点与要求对低噪放的结构、匹配、功耗和噪声等问题进行了权衡与分析,仿真结果表明:在1.2V供电时放大器可以提供20.8dB的前向增益,采用源端电感实现匹配并保证噪声性能,噪声系数约为1.1dB,放大器采用电流复用以降低功耗,每级电路从电源电压上抽取10mA左右的工作电流,并使反向隔离度达到-87dB.放大器的IP3为-8.4dBm,1dB压缩点为18dBm.
개소료일개기우0.18μm표준CMOS공예,가용우령중빈UHFRFID(사빈식별)접수궤계통적900MHz저조성방대기.근거사빈식별계통적특점여요구대저조방적결구、필배、공모화조성등문제진행료권형여분석,방진결과표명:재1.2V공전시방대기가이제공20.8dB적전향증익,채용원단전감실현필배병보증조성성능,조성계수약위1.1dB,방대기채용전류복용이강저공모,매급전로종전원전압상추취10mA좌우적공작전류,병사반향격리도체도-87dB.방대기적IP3위-8.4dBm,1dB압축점위18dBm.
A 1.2V 900MHz LNA for UHF RFID(Ultra High Frequency Radio Frequency Identification)systems implemented in TSMC 0.18μm standard CMOS process has been proposed.The circuitry is advised based on the features of the RFID application.This inductively degenerated common-source low noise amplifier provides a forward gain of 20.8dB with a noise figure of only 1.1dB while each stage drawing about 10mA current from 1.2V supply voltage.The spurious three stages structure which reuses the bias current guarantees a reverse isolation about-87dB.This LNA achieves IP3 of-8.4 dBm,1dB compression of-18dBm.