CAJ | 학술논문

在125mm标准CMOS工艺线上,对标准CMOS工艺经过一些必要的改动后,研制出了多叉指功率SiGe HBT.该器件的BVCBO为23V.在较大IC范围内,电流增益均非常稳定.在直流工作点IC=40mA ,VCE=8V测得fT为7GHz,表现出较大的电流处理能力.在B类连续波条件下,工作频率为3GHz时,测得输出功率为31dBm,Gp为10dB,且PAE为33.3%.测试结果表明,单片成品率达到了85%,意味着该研究结果已达到产业化水平.
재125mm표준CMOS공예선상,대표준CMOS공예경과일사필요적개동후,연제출료다차지공솔SiGe HBT.해기건적BVCBO위23V.재교대IC범위내,전류증익균비상은정.재직류공작점IC=40mA ,VCE=8V측득fT위7GHz,표현출교대적전류처리능력.재B류련속파조건하,공작빈솔위3GHz시,측득수출공솔위31dBm,Gp위10dB,차PAE위33.3%.측시결과표명,단편성품솔체도료85%,의미착해연구결과이체도산업화수평.
With modified necessary steps for SiGe implementation,multi-finger power SiGe HBT devices are fabricated in a CMOS process line with 125mm wafer.The devices show quite high BVCBO 23V.The current gain is very stable over a wide IC.The fT is up to 7GHz at a DC bias of IC=40mA and VCE=8V,which show high current handling capability.Under continuous conditions in B operation,the 31dBm output power,10dB Gp,and 33.3% of PAE are obtained at 3GHz.Based on extensive tests,it has been demonstrated that the yield on a wafer is up to 85%,which means that the research results are capable of commercialization.