CAJ | 학술논문

不同角度的GaP表面形貌刻蚀主要依赖于刻蚀参数的调节以及光刻胶的形貌,但要得到能够重复的光刻胶形貌是很困难的.研究了如何通过调节感应耦合等离子(ICP)刻蚀仪器本身的参数,而不依赖于不定的光刻胶形貌来得到可重复的表面形貌.通过研究可知,射频功率与腔室压强是影响表面形貌的最重要的两个参数.射频功率越小刻蚀得到的角度越大,腔室压强越大刻蚀得到的角度也越大.通常BCl3等离子体被用来作为GaP的刻蚀气体,但为了维持所需的等离子浓度以及更大的操作压强,Ar被加入刻蚀气体中.
불동각도적GaP표면형모각식주요의뢰우각식삼수적조절이급광각효적형모,단요득도능구중복적광각효형모시흔곤난적.연구료여하통과조절감응우합등리자(ICP)각식의기본신적삼수,이불의뢰우불정적광각효형모래득도가중복적표면형모.통과연구가지,사빈공솔여강실압강시영향표면형모적최중요적량개삼수.사빈공솔월소각식득도적각도월대,강실압강월대각식득도적각도야월대.통상BCl3등리자체피용래작위GaP적각식기체,단위료유지소수적등리자농도이급경대적조작압강,Ar피가입각식기체중.
Etching anisotropy of GaP relies on the etching parameters and the shape of the mask, yet it is very difficult to obtain the repeatable mask shape. In this paper a method to control the surface profile by changing the parameters of inductively coupled plasma (ICP) machine itself rather than depending on the indefinite mask shape was studied. It is concluded that cathode RF-power and chamber pressure are the two main parameters in the surface profile control. The smaller the RF-power is, the bigger the etching angle obtained;the higher the chamber pressure is, the bigger the etching angle achieved. BCl3 plasma chemistry is generally used to etch GaP compound semiconductors in a planar ICP reactor, into which the Ar plasma chemistry was added in this study to allow the plasma to maintain high ion density conditions over a broader range of operating pressure.