Carrier Depth Profile of Si/SiGe/Si n-p-n HBT Structural Materials Characterized by Electrochemical Capacitance-Voltage Method
  • 万方数据
    半导体学报 반도체학보
    CHINESE JOURNAL OF SEMICONDUCTORS
    2000年 11期 1050-1054 ,共5页

    林燕霞%黄大定%张秀兰%刘金平%李建平%高飞%孙殿照%曾一平%孔梅影

    림연하%황대정%장수란%류금평%리건평%고비%손전조%증일평%공매영



    SiGe HBT%GSMBE%ECV


    Si/SiGe/Si n-p-n HBT structural materials have been grown by gas source molecular beam epitaxy with disilane, solid Ge, diborane and phosphine as sources. The materials are of good structural properties. The effectiveness of Electrochemical Capacitance-Voltage (ECV) technique on profiling the shallow doped layers of nanometer dimensions has been demonstrated. Compared with spreading resistance probe, the ECV technique is relatively easy to get the carrier distribution profile, especially for the Si/SiGe/Si HBT structural materials with shallow (≤50nm) base regions (p-type SiGe layer, Ge content about 0.2). The results show that n-p-n structures can be obtained by in situ doping.
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