电子束蒸发制备氮化硼薄膜的红外光谱研究
전자속증발제비담화붕박막적홍외광보연구
IR Spectra Characteristics of Boron Nitride Thin Films Deposited by Electron Beam Evaporation
  • 万方数据
    光散射学报 광산사학보
    CHINESE JOURNAL OF LIGHT SCATTERING
    2009年 4期 309-311 ,共3页

    邓金祥%郭清秀%崔敏%赵卫平%杨冰%杨萍

    산금상%곽청수%최민%조위평%양빙%양평

    氮化硼薄膜%电子束蒸发%红外光谱 氮化硼薄膜%電子束蒸髮%紅外光譜
    담화붕박막%전자속증발%홍외광보
    Boron nitride thin films%Electron beam evaporation%IR Spectra
    用电子束蒸发法制备氮化硼薄膜,分别研究束流大小和蒸发时间长短对薄膜质量的影响,薄膜以红外吸收光谱标识.实验结果表明,柬流大小和蒸发时间长短对薄膜质量都有影响,经过900℃氮气保护退火后,都得到了高立方相含量的氮化硼薄膜.
    용전자속증발법제비담화붕박막,분별연구속류대소화증발시간장단대박막질량적영향,박막이홍외흡수광보표식.실험결과표명,간류대소화증발시간장단대박막질량도유영향,경과900℃담기보호퇴화후,도득도료고립방상함량적담화붕박막.
    Boron nitride thin films were deposited by electron beam evaporation.The electron beam flux and deposition time were changed independently.Then films were annealed at 900℃for l hour under N2 protection.The Boron nitride films were characterized by IR Spectra.The boron nitride thin films with large cubic phase content were obtained.
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