CAJ | 학술논문

对渗气阴极真空电弧法制备的四而体非晶炭(ta-c)膜实施氧等离子体刻蚀,消除其表面石墨层后,发现:原沉积膜中ta-C石墨表层的消除会影响其受激电子的石墨建序化.应用发射电子能耗谱,表面增强拉曼光谱和表面敏化X光吸收光谱等测量方法,测定了其表层的淌除(程度).样品的氧等离子体刻蚀阻迟了受激电子的石墨化作用,可能归因于多相成核过程中石墨晶核的缺失之故.
대삼기음겁진공전호법제비적사이체비정탄(ta-c)막실시양등리자체각식,소제기표면석묵층후,발현:원침적막중ta-C석묵표층적소제회영향기수격전자적석묵건서화.응용발사전자능모보,표면증강랍만광보화표면민화X광흡수광보등측량방법,측정료기표층적창제(정도).양품적양등리자체각식조지료수격전자적석묵화작용,가능귀인우다상성핵과정중석묵정핵적결실지고.
Electron-stimulated graphitic ordering in tetrahedral amorphous carbon (ta-C) films was found to be affected by the removal of the graphitic surface layer present in as-deposited films. To remove the graphitic layer on ta-C films fabricated by the filtered cathodic vacuum are method, the sample was etched with oxygen plasma. The removal of the surface layer was examined by transmission electron energy loss spectroscopy, surface-enhanced Raman spectroscopy,and surface-sensitive X-ray absorption spectroscopic measurements. The electron-stimulated graphitization was retarded in oxygen plasma etched samples presumably owing to the lack of graphitic nuclei for heterogeneous nucleation.