CAJ | 학술논문

以苯乙烯,2-异氰酸甲基丙烯酸酯(IEMA),以及乙二醇单乙烯基醚(EGME)等为原料,分两步合成了一种主链为聚苯乙烯结构的多乙烯基醚(VEs)树脂(PSIM-VE).通过测定该树脂的红外光谱、核磁氢谱及核磁碳谱,确定了其分子结构式.测定了该树脂的紫外透光性,并且研究了基于该树脂的紫外光刻负胶以甲苯及四氧呋喃为溶剂时的成膜性及紫外光固化性能.通过接触式光刻工艺,在光刻胶膜层上得到了4μm周期的光栅结构.
이분을희,2-이청산갑기병희산지(IEMA),이급을이순단을희기미(EGME)등위원료,분량보합성료일충주련위취분을희결구적다을희기미(VEs)수지(PSIM-VE).통과측정해수지적홍외광보、핵자경보급핵자탄보,학정료기분자결구식.측정료해수지적자외투광성,병차연구료기우해수지적자외광각부효이갑분급사양부남위용제시적성막성급자외광고화성능.통과접촉식광각공예,재광각효막층상득도료4μm주기적광책결구.
A novel UV curable vinyl ether functionalized polymer resin was synthesized via two steps: (1) free radical copolymerization of styrene and 2-isocyanatoethyl methacrylate (IEMA) to form the backbone of the resin molecules with pendent reactive isocyanate groups; (2) reaction with ethylene glycol vinyl ether (EGME) to graft vinyl ether groups to the backbone. The FTIR, ~1HNMR and ~(13)CNMR spectra of the synthesized resin were used to determine its molecular structure. The transmission of light of this resin was measured by UV-visible spectrometer. The film formation property of the resin by spin-coating method was studied with the solvent of toluene and THF. This resin was applied as a negative photoresist and 4μm pitch grating structures were achieved on the film of the photoresist by UV photolithography. The mechanism of this negative resist is that the vinyl ether groups crosslinked under the exposure of UV-light and made the exposed portion unsoluble to the developer. The unexposed portion was dissolved ty the developer. The grating patterns were formed on the substrate.