CAJ | 학술논문

在有效质量近似下,考虑强的内建电场和应变对材料参量的影响,变分研究了流体静压力对有限高势垒应变纤锌矿GaN/Al0.15Ga0.85 N柱形量子点中重空穴激子的结合能、发光波长和电子空穴复合率的影响.数值结果表明,激子结合能和电子空穴复合率随流体静压力的增大而近线性增大,发光波长随流体静压力的增大而单调减小.在量子点尺寸较小的情况下,流体静压力对激子结合能和电子空穴复合率的影响更明显.由于应变效应,为了获得有效的电子-空穴复合过程,GaN量子点的高度必须小于5.5 nm.
재유효질량근사하,고필강적내건전장화응변대재료삼량적영향,변분연구료류체정압력대유한고세루응변섬자광GaN/Al0.15Ga0.85 N주형양자점중중공혈격자적결합능、발광파장화전자공혈복합솔적영향.수치결과표명,격자결합능화전자공혈복합솔수류체정압력적증대이근선성증대,발광파장수류체정압력적증대이단조감소.재양자점척촌교소적정황하,류체정압력대격자결합능화전자공혈복합솔적영향경명현.유우응변효응,위료획득유효적전자-공혈복합과정,GaN양자점적고도필수소우5.5 nm.
Within the effective-mass approximation,the influences of hydrostatic pressure on the exciton binding energies,emission wavelengths and electron-hole recombination rates for a heavyhole exciton in strained wurtzite (WZ) GaN/Al0.15 Ga0.85 N cylindrical quantum dot (QD) with finite potential barriers are investigated via a variational procedure,with considering the strong built-in electric field (BEF) effect and strain dependence of material parameters. Numerical results show that the exciton binding energies and electron-hole recombination rates both increase almost linearly,and the emission wavelengths are monotonically reduced with the increase of the applied hydrostatic pressure.The hydrostatic pressure has a remarkable influence on the exciton binding energy and electron-hole recombination rate for the QD with a small size.Furthermore,the height of GaN QDs must be less than 5.5 nm for an efficient electron-hole recombination process due to strain effects.