半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2008年
6期
1052-1056
,共5页
邓赞红%方晓东%陶汝华%董伟伟%李达%朱雪斌
鄧讚紅%方曉東%陶汝華%董偉偉%李達%硃雪斌
산찬홍%방효동%도여화%동위위%리체%주설빈
溶胶.凝胶法%P型透明导电氧化物%CuAlO2
溶膠.凝膠法%P型透明導電氧化物%CuAlO2
용효.응효법%P형투명도전양화물%CuAlO2
sol-gel processes%p-type transparent conducting oxides CuAlO2
采用溶胶.凝胶法制备了铜铁矿结构CuxAlO2陶瓷体材.当1≤x<1.04时,样品为纯铜铁矿相,当x≥1.04时,样品中出现了微弱的CuO相.样品Cu1.04AlO2的室温电导率比名义组分CuAlO2大了近一个数量级.研究表明,替位式缺陷CuAl(Cu2+离子取代Al3+离子)是导致电导增加的主要受主缺陷机制,Cu过量CuxAlO2的分子式可更准确地表示为Cu(Al1-yCuy)O2.
採用溶膠.凝膠法製備瞭銅鐵礦結構CuxAlO2陶瓷體材.噹1≤x<1.04時,樣品為純銅鐵礦相,噹x≥1.04時,樣品中齣現瞭微弱的CuO相.樣品Cu1.04AlO2的室溫電導率比名義組分CuAlO2大瞭近一箇數量級.研究錶明,替位式缺陷CuAl(Cu2+離子取代Al3+離子)是導緻電導增加的主要受主缺陷機製,Cu過量CuxAlO2的分子式可更準確地錶示為Cu(Al1-yCuy)O2.
채용용효.응효법제비료동철광결구CuxAlO2도자체재.당1≤x<1.04시,양품위순동철광상,당x≥1.04시,양품중출현료미약적CuO상.양품Cu1.04AlO2적실온전도솔비명의조분CuAlO2대료근일개수량급.연구표명,체위식결함CuAl(Cu2+리자취대Al3+리자)시도치전도증가적주요수주결함궤제,Cu과량CuxAlO2적분자식가경준학지표시위Cu(Al1-yCuy)O2.
Cu-excess CuxAlO2 ceramics with delafossite phases were synthesized using sol-gel. In the composition range of 1≤x<1.04, there are no detectable non-delafossite phases. Weak diffraction peaks of CuO are observed when x≥1.04.The room temperature conductivity of the Cu1.04AlO2 sample is improved by nearly an order of magnitude over that of the CuAlO2 sample. The major defect mechanism responsible for the conductivity enhancement is proposed to be substitution defects of CuAl (Cu2+ ions substitute Al3+ ions). The composition formula unit for Cu-excess CuxAlO2 may be expressed as Cu(Al1-yCuy)O2.