CAJ | 학술논문

在液晶显示器的制造过程中,光刻是极为重要的制造工艺过程之一.将厚的独立的负胶膜或者将光刻胶涂敷在二氧化硅衬底上以后,可以测量其膜厚,因为光刻胶膜厚决定其光刻工艺的工艺条件.能够快速地测量光刻胶的膜厚,是液晶显示器制造过程的先决性工作的一部分.文章提出了测量上述光刻胶膜厚的新方法,即利用紫外可见吸收光谱法中的Beer-Lambert定律来确定膜厚.在我们的研究中,采用acrylic负胶作为基质(resin),它分别具有50 μm和100μm的膜厚.在350 nm时,50 μm的薄膜的最大吸收为0.728,而100μm的最大吸收为1.468 5.而在正胶的研究中,采用novolac作为基质(resin).它的膜厚通常是1～5 μm.在紫外可见吸收光谱测膜厚的实验中,当重氮荼醌的吸收波长为403.8 nm时,5.93μm厚的薄膜的最大吸收为1.757 4,其膜厚是由扫描电镜测得的.而另一个正胶薄膜在403.8 nm的最大吸收为0.982 3,其薄膜厚度计算得到为3.31 μm.利用这些数据,我们得到了这两种光刻胶薄膜的紫外可见吸收光强与其膜厚关系的两个校准曲线.
재액정현시기적제조과정중,광각시겁위중요적제조공예과정지일.장후적독립적부효막혹자장광각효도부재이양화규츤저상이후,가이측량기막후,인위광각효막후결정기광각공예적공예조건.능구쾌속지측량광각효적막후,시액정현시기제조과정적선결성공작적일부분.문장제출료측량상술광각효막후적신방법,즉이용자외가견흡수광보법중적Beer-Lambert정률래학정막후.재아문적연구중,채용acrylic부효작위기질(resin),타분별구유50 μm화100μm적막후.재350 nm시,50 μm적박막적최대흡수위0.728,이100μm적최대흡수위1.468 5.이재정효적연구중,채용novolac작위기질(resin).타적막후통상시1～5 μm.재자외가견흡수광보측막후적실험중,당중담도곤적흡수파장위403.8 nm시,5.93μm후적박막적최대흡수위1.757 4,기막후시유소묘전경측득적.이령일개정효박막재403.8 nm적최대흡수위0.982 3,기박막후도계산득도위3.31 μm.이용저사수거,아문득도료저량충광각효박막적자외가견흡수광강여기막후관계적량개교준곡선.
A new method to measure the resist film thickness is proposed, which is, to use the Beer-Lambert's Law to determine the film thickness, using the UV-visible spectroscopy. The negative photoresist in this study uses the acrylic as the resin, which has the film thickness of 50 μm and 100 μm, respectively. It is observed that the absorbance maximum at 350 nm for 50 μm thick "dry" resist film is 0.728 while the absorbance maximum at the same wavelength for 100 μm thick resist is 1.468 5. Here the positive photoresist uses the novolac as the resin while the film thickness in this study is typically between 1～5 μm. In this particular experiment, the absorbance is 1. 757 4 at 403. 8 nm while the film thickness is measured to be 5.93 μm through the scanning electron microscopy. Another resist film has the absorbance of 0. 982 3 at 403.8 nm and the film thickness is 3.31 μm.