CAJ | 학술논문

介绍L波段、低偏置电压下工作的自对准InGaP/GaAs功率异质结双极晶体管的研制.在晶体管制作过程中采用了发射极-基极金属自对准、空气桥以及减薄等工艺改善其功率特性.功率测试结果显示:当器件工作在AB类,工作频率为2GHz,集电极偏置电压仅为3V时,尺寸为2×(3μm×15μm)×12的功率管获得了最大输出功率为23dBm,最大功率附加效率为45%,线性增益为10dB的良好性能.
개소L파단、저편치전압하공작적자대준InGaP/GaAs공솔이질결쌍겁정체관적연제.재정체관제작과정중채용료발사겁-기겁금속자대준、공기교이급감박등공예개선기공솔특성.공솔측시결과현시:당기건공작재AB류,공작빈솔위2GHz,집전겁편치전압부위3V시,척촌위2×(3μm×15μm)×12적공솔관획득료최대수출공솔위23dBm,최대공솔부가효솔위45%,선성증익위10dB적량호성능.
A self-aligned InGaP/GaAs power HBTs for L-band power amplifier with low bias voltage are described.Base emitter metal self-aligning ,air-bridge ,and wafer-thinning are used to improve microwave power performance.A power HBT with double size of emitter of (3μm× 15μm) × 12 is fabricated. When the packaged HBT operates in class AB at a collector bias of 3V,a maximum 23dBm output power with 45% power added efficiency is achieved at 2GHz. The results show that the InGaP/GaAs power HBTs have great potential in mobile communication systems operating at low bias voltage.