CAJ | 학술논문

生长了InGaAsp/InGaP/In(AlGa)P材料分别限制应变量子阱半导体激光器,发光波长780 nm.利用电化学C-V表征材料掺杂,掺杂浓度达1018 cm-1.利用荧光PL及EL表征其光学性质.PL峰为765 nm.制得100 μm、宽1 mm长条形.测得阈值电流为315 mA,斜率效率超过1 W/A,功率转换可达40 %左右.注入电流1.5 A,光功率单管输出达到1.2 W.
생장료InGaAsp/InGaP/In(AlGa)P재료분별한제응변양자정반도체격광기,발광파장780 nm.이용전화학C-V표정재료참잡,참잡농도체1018 cm-1.이용형광PL급EL표정기광학성질.PL봉위765 nm.제득100 μm、관1 mm장조형.측득역치전류위315 mA,사솔효솔초과1 W/A,공솔전환가체40 %좌우.주입전류1.5 A,광공솔단관수출체도1.2 W.
We have developed one separate confinement heterostructure InGaAsp/InGaP/In(AlGa)P laser diode(LD) of 780 nm weavelength,and use electrochemical C-V and PL to characterize the materials.PL peak wavelength is 765 nm and EL wavelength is 780 nm.We obtained 100 μm wide stripe,and 1 mm long LD bars.The threshold current is 315 mA,slope efficency can reach above 99 %.Pow-er conversion efficiency η reaches above 40 %.When current is 1.5 A,single LD can achieve above1.2 W output power.