CAJ | 학술논문

开展了使用TEOS和H2O混合物进行PECVD生长SiO2膜的研究工作.氧化硅折射率分布在1.453±0.001的范围，且随偏离中心距离基本不变.薄膜厚度是中央大，边沿薄，其厚度相对变化不超过±1.5％（51mm衬底).利用TEOS源PECVD，并结合退火技术，摸索出厚膜氧化硅生长工艺，已成功地在硅衬底上生长出厚度超过15μm氧化硅厚膜，可用于制备氧化硅平面波导器件.
개전료사용TEOS화H2O혼합물진행PECVD생장SiO2막적연구공작.양화규절사솔분포재1.453±0.001적범위，차수편리중심거리기본불변.박막후도시중앙대，변연박，기후도상대변화불초과±1.5％（51mm츤저).이용TEOS원PECVD，병결합퇴화기술，모색출후막양화규생장공예，이성공지재규츤저상생장출후도초과15μm양화규후막，가용우제비양화규평면파도기건.
The deposition of silicon dioxide by plasma enhanced chemical vapor deposition from tetraethylorthosilicate (TEOS) and H2O has been studied.Silicon oxide with refractive index of 1.453 has been obtained.Tests on the 51mm wafers show that both thickness uniformity of ±1.5% and constant refractive index of 1.453 can be achieved.By raising the deposition temperature,the qualities have been improved,while the deposition rate decreased.A SiO2 thick film deposition technique has been developed combining TEOS-PECVD technique with high temperature annealing.