CAJ | 학술논문

分析了用金属有机物气相外延方法(MOVPE)在蓝宝石衬底上生长的铟镓氮(InGaN)的光致发光(PL)性质.发现在4.7K至300K范围内，随着温度升高，InGaN带边辐射向低能方向移动，峰值变化基本符合Varshni经验公式；同时InGaN发光强度虽有所衰减，但比GaN衰减程度小，分析了导致GaN和InGaN光致发光减弱的可能因素.
분석료용금속유궤물기상외연방법(MOVPE)재람보석츤저상생장적인가담(InGaN)적광치발광(PL)성질.발현재4.7K지300K범위내，수착온도승고，InGaN대변복사향저능방향이동，봉치변화기본부합Varshni경험공식；동시InGaN발광강도수유소쇠감，단비GaN쇠감정도소，분석료도치GaN화InGaN광치발광감약적가능인소.
The properties of photoluminescence (PL) of InGaN grown by metalorganic vapor phase epitaxy have been studied.It is found that the near-band-gap radiation wavelength shifts to the lower energy when the temperature increasing from 4.7K to 300K.The red-shift accords with the Varshni’s empirical equation on the whole.The temperature quenching has also been observed in the PL of InGaN,though it is much less than that of GaN.The possible reason that causes the quenching has been analyzed.