1.25Gb/s InP基多量子阱激光器与HBT驱动电路的单片集成
1.25Gb/s InP기다양자정격광기여HBT구동전로적단편집성
A 1.25Gb/s InP-Based Vertical Monolithic Integration of an MQW Laser Diode and an HBT Driver with a Lateral Buffer Mesa Structure
  • 万方数据
    半导体学报 반도체학보
    CHINESE JOURNAL OF SEMICONDUCTORS
    2002年 5期 468-472 ,共5页

    李献杰%曾庆明%徐晓春%敖金平%赵方海%杨树人%柯锡明%王志功%刘式墉%梁春广

    리헌걸%증경명%서효춘%오금평%조방해%양수인%가석명%왕지공%류식용%량춘엄

    光发射%单片集成%光电集成电路 光髮射%單片集成%光電集成電路
    광발사%단편집성%광전집성전로
    integrated optoelectronics%optoelectronic integrated
    描述了一种基于InP材料沿[011]晶向湿法化学腐蚀形成平滑侧壁实现的InP基多量子阱激光器和异质结双极晶体管驱动电路单片集成.通过一个横向缓冲台面结构,降低了激光器阳极和晶体管集电极互连工艺的难度,改善了光发射单片光电集成电路的可制造性.采用该方法制作的光发射单片直流功耗为120mW,在码长223-1传输速率1.5Gb/s伪随机码信号调制下有清晰的眼图,光输出功率为2dBm.
    묘술료일충기우InP재료연[011]정향습법화학부식형성평활측벽실현적InP기다양자정격광기화이질결쌍겁정체관구동전로단편집성.통과일개횡향완충태면결구,강저료격광기양겁화정체관집전겁호련공예적난도,개선료광발사단편광전집성전로적가제조성.채용해방법제작적광발사단편직류공모위120mW,재마장223-1전수속솔1.5Gb/s위수궤마신호조제하유청석적안도,광수출공솔위2dBm.
    A novel fabrication process related to a smoothly wet chemical etching profile of InP-based epitaxial layers in the crystal direction of [011] for an InP-based monolithic vertically integrated transmitter with an MQW laser diode and a heterojunction bipolar transistors driver circuit is described.A clear eye output diagram via an O/E converter is demonstrated under a 1.25Gb/s non-return-zero pseudorandom code with a pattern length of 223-1.The integrated transmitter has a power dissipation of about 120mW with an optical output of 2dBm.
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