半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2006年
z1期
36-39
,共4页
张海鹏%魏同立%冯耀兰%汪沁%张正璠
張海鵬%魏同立%馮耀蘭%汪沁%張正璠
장해붕%위동립%풍요란%왕심%장정번
绝缘层上硅%CMOS%高温%模型%下降时间
絕緣層上硅%CMOS%高溫%模型%下降時間
절연층상규%CMOS%고온%모형%하강시간
SOI%CMOS%high temperature%model%fall time
详细介绍了EM NMOST和AM PMOST组合的TF SOI CMOS非门下降时间的温度电学模型建立过程.分别进行了27,100,150,250,250,300 ℃的非门瞬态特性实验.实验结果表明,EM NMOST和AM PMOST组合的TF SOI CMOS非门的下降时间随温度升高稍有增加,非常适合于高温应用.如果对其进行优化设计,有利于改善其上升-下降时间温度特性的对称性,提高其最高工作频率.
詳細介紹瞭EM NMOST和AM PMOST組閤的TF SOI CMOS非門下降時間的溫度電學模型建立過程.分彆進行瞭27,100,150,250,250,300 ℃的非門瞬態特性實驗.實驗結果錶明,EM NMOST和AM PMOST組閤的TF SOI CMOS非門的下降時間隨溫度升高稍有增加,非常適閤于高溫應用.如果對其進行優化設計,有利于改善其上升-下降時間溫度特性的對稱性,提高其最高工作頻率.
상세개소료EM NMOST화AM PMOST조합적TF SOI CMOS비문하강시간적온도전학모형건립과정.분별진행료27,100,150,250,250,300 ℃적비문순태특성실험.실험결과표명,EM NMOST화AM PMOST조합적TF SOI CMOS비문적하강시간수온도승고초유증가,비상괄합우고온응용.여과대기진행우화설계,유리우개선기상승-하강시간온도특성적대칭성,제고기최고공작빈솔.
The temperature dependence of the fall time of an SOI CMOS inverter with EM NMOST and AM PMOST assemblies is modeled approximately in electronics in a high temperature range (27～300℃) in detail. In addition, experiments on the inverter are done at 27,100,150,200,250, and 300℃, respectively, and the measured results are illustrated and discussed simply. They indicate that the inverter is very suitable for high temperature applications up to 300℃ and that its fall time varies only slightly with temperature. If optimization is introduced during its design process,a more symmetrical rise/fall characteristic may be realized, and it could be used at higher frequencies.
