CAJ | 학술논문

通过磁控溅射技术在Si (111)衬底上沉积Ga2O3/Co薄膜,然后在不同温度下氨化制得GaN纳米结构.采用X射线衍射(XRD)、傅里叶红外吸收谱(FTIR)、扫描电子显微镜(SEM)、高分辨透射电镜(HRTEM)和光致发光谱(PL)对样品的结构、形貌和光学特性进行了表征.结果显示合成的GaN纳米结构具有六方纤锌矿结构,且纳米结构的生长受温度影响很大.PL谱显示在388 nm处有一强的紫外发光峰,表明其在低维激光器件方面的应用优势.同时对纳米结构的生长机制进行了简单讨论.
통과자공천사기술재Si (111)츤저상침적Ga2O3/Co박막,연후재불동온도하안화제득GaN납미결구.채용X사선연사(XRD)、부리협홍외흡수보(FTIR)、소묘전자현미경(SEM)、고분변투사전경(HRTEM)화광치발광보(PL)대양품적결구、형모화광학특성진행료표정.결과현시합성적GaN납미결구구유륙방섬자광결구,차납미결구적생장수온도영향흔대.PL보현시재388 nm처유일강적자외발광봉,표명기재저유격광기건방면적응용우세.동시대납미결구적생장궤제진행료간단토론.
GaN nanostructures were synthesized on Si (111) substrates through ammoniating the Ga2O3/Co films at different temperatures by magnetron sputtering system.The structure,morphology and optical properties of the samples were characterized by X-ray diffraction (XRD),Fourier transform infrared spectroscopy (FTIR),scanning electron microscopy (SEM),high resolution transmission electron microscopy (HRTEM) and photoluminescence (PL).The resuits show that the synthesized GaN nanostructures are of hexagonal wurtzite structure,and the growth of GaN nanostructures is affected greatly by the temperature.The PL results reveal a strong UV emission at 388 nm,which will have a good advantage in applications of low-dimensional laser devices.The growth mechanism was also briefly discussed.