CAJ | 학술논문

在微机械开关与硅IC工艺设计和兼容方面进行了改进,获得了一种可与IC工艺兼容的RF MEMS微机械开关.采用介质隔离工艺技术把这种RF MEMS微机械开关制作在绝缘的多晶硅衬底上,实现了与IC工艺兼容;采用在金属膜桥的端点附近刻蚀一些孔的优化方法,降低了RF MEMS微机械开关的下拉电压.用TE2819电容测试设备测试开关的电容,测得开关的开态电容、关态电容和致动电压分别为0.32pF、6pF和25V.用HP8753C网络分析仪对RF MEMS微机械开关进行了RF特性测试,得出RF MEMS微机械开关在频率1.5GHz下关态的隔离度为35dB,开态的插入损耗为2dB,用示波器测得该开关的开关速度为3μs.
재미궤계개관여규IC공예설계화겸용방면진행료개진,획득료일충가여IC공예겸용적RF MEMS미궤계개관.채용개질격리공예기술파저충RF MEMS미궤계개관제작재절연적다정규츤저상,실현료여IC공예겸용;채용재금속막교적단점부근각식일사공적우화방법,강저료RF MEMS미궤계개관적하랍전압.용TE2819전용측시설비측시개관적전용,측득개관적개태전용、관태전용화치동전압분별위0.32pF、6pF화25V.용HP8753C망락분석의대RF MEMS미궤계개관진행료RF특성측시,득출RF MEMS미궤계개관재빈솔1.5GHz하관태적격리도위35dB,개태적삽입손모위2dB,용시파기측득해개관적개관속도위3μs.
The improvements of the design and the compatibility with silicon IC of RF MEMS switch are presented.The compatibility with silicon IC is realized by dielectric isolation technology,and the decrease of the pull voltage of the switch is done by etching some holes on the metal membrane.The preliminary test results are as follows:Coff and Con are 0.32pF,6pF,respectively;the pull down voltage is about 25V.The package of the RF MEMS switch is done by micro-stripline,and the isolation and the insertion loss are 35dB,2dB,respectively at 1.5GHz;the switching speed is about 3μs by oscilloscope.