CAJ | 학술논문

报道了制备在50mm石英玻璃衬底上的透明氧化锌薄膜晶体管(ZnO-TFT),采用了底栅和顶栅两种结构进行比较.ZnO沟道层由射频磁控溅射方法制备,SiO2薄膜作为栅绝缘层.结果发现底栅结构的ZnO-TFT具有较好的电学性质,该器件工作在n沟道增强模式,具有较好的夹断效应和饱和特性,其场效应迁移率、阈值电压和电流开关比分别为18.4cm2/(V·s),-0.5V和104.顶栅结构的ZnO-TFT则工作在n沟道耗尽模式,没有明显的饱和特征.不同结构ZnO-TFT电学性质的差别可能是由于不同的ZnO/SiO2界面特性所致.两种结构的ZnO-TFT在可见光波段都有很高的光学透过率.
보도료제비재50mm석영파리츤저상적투명양화자박막정체관(ZnO-TFT),채용료저책화정책량충결구진행비교.ZnO구도층유사빈자공천사방법제비,SiO2박막작위책절연층.결과발현저책결구적ZnO-TFT구유교호적전학성질,해기건공작재n구도증강모식,구유교호적협단효응화포화특성,기장효응천이솔、역치전압화전류개관비분별위18.4cm2/(V·s),-0.5V화104.정책결구적ZnO-TFT칙공작재n구도모진모식,몰유명현적포화특정.불동결구ZnO-TFT전학성질적차별가능시유우불동적ZnO/SiO2계면특성소치.량충결구적ZnO-TFT재가견광파단도유흔고적광학투과솔.
Transparent zinc oxide thin film transistors (ZnO-TFTs) with bottom-gate and top-gate structures were con-structed on 50mm silica glass substrates. The ZnO films were deposited by RF magnetron sputtering and SiO2 films servedas the gate insulator layer. We found that the ZnO-TFTs with bottom-gate structure have better electrical performancethan those with top-gate structure. The bottom-gate ZnO-TFTs operate as an n-channel enhancement mode,which haveclear pinch off and saturation characteristics. The field effect mobility, threshold voltage, and the current on/off rationel depletion mode operation and no saturation characteristics were detected. The electrical difference of the devices maybe due to the different character of the interface between the channel and insulator layers. The two transistors types havehigh transparency in the visible light region.