半导体技术
半導體技術
반도체기술
SEMICONDUCTOR TECHNOLOGY
2010年
5期
485-488
,共4页
张欣旺%孟海涛%杜占坤%阎跃鹏
張訢旺%孟海濤%杜佔坤%閻躍鵬
장흔왕%맹해도%두점곤%염약붕
带隙基准电流源%温度系数%二阶曲率补偿%电源电压调整率
帶隙基準電流源%溫度繫數%二階麯率補償%電源電壓調整率
대극기준전류원%온도계수%이계곡솔보상%전원전압조정솔
bandgap current reference%temperature coefficient (TC)%second-order curvature-compensation%power voltage coefficient
提出了一种新颖的CMOS带隙基准电流源的二阶曲率补偿技术,通过增加一个运算跨导放大器(OTA),使带隙基准参考电路的电流特性与理论分析相符合,实现低温度系数(TC)的参考电流.该电路采用SMIC 0:13 μm标准CMOS工艺,可在1.2V的电源电压下工作,有效面积为0.045 mm2.仿真结果表明,在-40~85℃温度范围内参考电流的温度系数为0.5×10-6/℃;当电源电压为1.1 V时,电路依然可以正常工作,电源电压调整率为1 mV/V.
提齣瞭一種新穎的CMOS帶隙基準電流源的二階麯率補償技術,通過增加一箇運算跨導放大器(OTA),使帶隙基準參攷電路的電流特性與理論分析相符閤,實現低溫度繫數(TC)的參攷電流.該電路採用SMIC 0:13 μm標準CMOS工藝,可在1.2V的電源電壓下工作,有效麵積為0.045 mm2.倣真結果錶明,在-40~85℃溫度範圍內參攷電流的溫度繫數為0.5×10-6/℃;噹電源電壓為1.1 V時,電路依然可以正常工作,電源電壓調整率為1 mV/V.
제출료일충신영적CMOS대극기준전류원적이계곡솔보상기술,통과증가일개운산과도방대기(OTA),사대극기준삼고전로적전류특성여이론분석상부합,실현저온도계수(TC)적삼고전류.해전로채용SMIC 0:13 μm표준CMOS공예,가재1.2V적전원전압하공작,유효면적위0.045 mm2.방진결과표명,재-40~85℃온도범위내삼고전류적온도계수위0.5×10-6/℃;당전원전압위1.1 V시,전로의연가이정상공작,전원전압조정솔위1 mV/V.
A novel second-order curvature-compensation technology of CMOS bandgap current reference circuit is proposed.By adding an operational transconductance amplifier(OTA)to make current characteristics of bandgap reference circuit according to theory analysis,low temperature coefficient (TC) reference current was achieved.The circuit was designed with SMIC 0.13 μm standard CMOS technology,which worked at 1.2V power voltage and consumes 0.045 mm2 areas.Simulation result shows that the TC of reference current is 0.5×10-6/℃ from-40℃ to 85℃.When power voltage is 1.1 V.circuit still works with 1 mV/V power voltage coefficient.