CAJ | 학술논문

在三代微光像管中,微通道板(MCP)输入面上覆盖一层超薄离子壁垒膜(IBF),目的是保护光电阴极,延长像管使用寿命.为了深入研究离子壁垒膜的特性,本文对Al2O3和SiO2两种离子壁垒膜的粒子阻透能力进行了蒙特卡罗模拟,结果表明:5 nm厚Al2O3和SiO2离子壁垒膜的死电压分别为230 ～240 V和220～230 V之间；输入能量0.24 keV时背散射电子数最高达19％左右；输入能量0.8 keV时,Al2O3膜电子透过率为87.16％,SiO2膜为88.12％,电子透过的极限膜厚前者为15 nm,后者为16nm；对于输入能量0.26 keV的C+、N+、O+离子,Al2O3膜的离子阻当率为95％～99％；Al2O3离子壁垒膜在厚度5nm时具有较好的电子透过率和较高的离子阻挡率.
재삼대미광상관중,미통도판(MCP)수입면상복개일층초박리자벽루막(IBF),목적시보호광전음겁,연장상관사용수명.위료심입연구리자벽루막적특성,본문대Al2O3화SiO2량충리자벽루막적입자조투능력진행료몽특잡라모의,결과표명:5 nm후Al2O3화SiO2리자벽루막적사전압분별위230 ～240 V화220～230 V지간；수입능량0.24 keV시배산사전자수최고체19％좌우；수입능량0.8 keV시,Al2O3막전자투과솔위87.16％,SiO2막위88.12％,전자투과적겁한막후전자위15 nm,후자위16nm；대우수입능량0.26 keV적C+、N+、O+리자,Al2O3막적리자조당솔위95％～99％；Al2O3리자벽루막재후도5nm시구유교호적전자투과솔화교고적리자조당솔.
In the third-generation low-level-light image tube,a super thinner ion barrier film (IBF) was covered on the input surface of microchannel plate (MCP) to protect the photocathode and prolong the operation life of the image tube.In order to further investigate the properties of IBF,a Monte-Carlo simulation on the stopping and transmission characteristics of particles in Al2O3 and SiO2 IBFs were conducted.It was fotmd that the dead-voltnge was 230 ～240 V and 220 ～230 V for Al2O3 and SiO2 IBF with the thickness of 5 nm,respectively.The number of the back-acattered electron was as high as 19％ for the incident electrons with energy of 0.24 ke V.For the incident energy of 0.8 ke V,the electron transmittance was 87.16％ and 88.12％,and the limited thickness of the IBF was 15 nm and 16nm for Al2O3 and SiO2 film,respectively.For C +,N + and O + ions with energy of 0.26 keY,the ion stopping power was 95％～99％ for Al2O3 IBF.The Al2O3 IBF showed satisfied electron transmittance and ion stopping power when the thickness of IBF was 5 nm.