CAJ | 학술논문

采用射频磁控溅射法在Si(100)衬底上制备了Mg_0.33Zn_0.67O薄膜,研究了Mg_0.33Zn_0.67O薄膜的结构和光学性能.结果表明,Si(100)衬底上Mg_0.33Zn_0.67O薄膜呈六方纤锌矿结构,薄膜沿c方向取向生长,且c轴方向晶格增大0.03 nm.薄膜呈现优异的半导体特性,激子吸收峰位于297 nm,禁带宽度约为4.3 eV.薄膜平均粒径约为20 nm.薄膜在深紫外激发下的荧光发射位于368 nm.
채용사빈자공천사법재Si(100)츤저상제비료Mg_0.33Zn_0.67O박막,연구료Mg_0.33Zn_0.67O박막적결구화광학성능.결과표명,Si(100)츤저상Mg_0.33Zn_0.67O박막정륙방섬자광결구,박막연c방향취향생장,차c축방향정격증대0.03 nm.박막정현우이적반도체특성,격자흡수봉위우297 nm,금대관도약위4.3 eV.박막평균립경약위20 nm.박막재심자외격발하적형광발사위우368 nm.
Mg_0.33Zn_0.67Ofilm was prepared on silicon(100) substrate by RF magnetron sputtering (RFMS) method.Structure and optical properties of Mg_0.33Zn_0.67Ofilm were studied.Result indicates that Mg_0.33Zn_0.67O film deposited on Si substrate is hexagonal wurtzite structure.The growth orientation of the film is along c axis and the lattice of c axis orientation increases 0.03 nm.The film is present superior semiconductor property.The absorption peak of exciton is at 297 nm and the band gap of film is about 4.3 eV.The average grain diameter is about 20 nm.The fluorescent emission peak is at 368 nm under deep-ultraviolet excitation.