CAJ | 학술논문

建立了基于漂移扩散理论的4H-SiC埋沟MOSFET器件的物理解析模型.SiC/SiO2界面处的界面态密度及各种散射机制都会导致器件载流子迁移率的下降,采用平均迁移率模型,分析散射机制对载流子迁移率的影响,讨论了界面态对阈值电压的影响.考虑到器件处在不同工作模式下,沟道电容会随栅压的变化而改变,采用了平均电容概念.器件仿真结果表明:界面态的存在导致漏极电流减小;采用平均迁移率模型得到的计算结果与实验测试结果较为一致.
건립료기우표이확산이론적4H-SiC매구MOSFET기건적물리해석모형.SiC/SiO2계면처적계면태밀도급각충산사궤제도회도치기건재류자천이솔적하강,채용평균천이솔모형,분석산사궤제대재류자천이솔적영향,토론료계면태대역치전압적영향.고필도기건처재불동공작모식하,구도전용회수책압적변화이개변,채용료평균전용개념.기건방진결과표명:계면태적존재도치루겁전류감소;채용평균천이솔모형득도적계산결과여실험측시결과교위일치.
A physical model for 4H-SiC buried channel MOSFET was proposed based on drift-diffusion theory. SiC/SiO2 interface state density and scattering mechanism may cause carrier mobility degradation. By applying average mobility model, effects of scattering mechanism on carrier mobility were analyzed, and the influence of interface state on threshold voltage was discussed. As channel capacitor varies with gate voltages in different operation mode, the average capacitor was employed to characterize the capacitor in various models. It has been shown that the presence of interface state led to a decrease in drain current. Results from simulation with average mobility analytical model are identical with those from measurement.