半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2008年
1期
99-104
,共6页
赵涤燹%闫娜%徐雯%杨立吾%王俊宇%闵昊
趙滌燹%閆娜%徐雯%楊立吾%王俊宇%閔昊
조조선%염나%서문%양립오%왕준우%민호
射频识别%单栅%非挥发性存储器%标准CMOS工艺%敏感放大器%低功耗
射頻識彆%單柵%非揮髮性存儲器%標準CMOS工藝%敏感放大器%低功耗
사빈식별%단책%비휘발성존저기%표준CMOS공예%민감방대기%저공모
RFID%single-poly%non-volatile memory%standard CMOS process%sense amplifier%low power
针对低成本、低功耗无源射频电子标签,采用SMIC 0.18μm标准CMOS工艺设计实现了单栅、576bit的非挥发性存储器.存储器单元基于双向Fowler-Nordheim隧穿效应原理并采用普通的pMOS晶体管实现;编程/擦写时间为10ms/16bit.芯片实现块编程和擦写功能,通过提出一种新型的敏感放大器而实现了读功耗的优化.在电源电压为1.2V,数据率为640kHz时,读操作平均消耗电流约为0.8μA.
針對低成本、低功耗無源射頻電子標籤,採用SMIC 0.18μm標準CMOS工藝設計實現瞭單柵、576bit的非揮髮性存儲器.存儲器單元基于雙嚮Fowler-Nordheim隧穿效應原理併採用普通的pMOS晶體管實現;編程/抆寫時間為10ms/16bit.芯片實現塊編程和抆寫功能,通過提齣一種新型的敏感放大器而實現瞭讀功耗的優化.在電源電壓為1.2V,數據率為640kHz時,讀操作平均消耗電流約為0.8μA.
침대저성본、저공모무원사빈전자표첨,채용SMIC 0.18μm표준CMOS공예설계실현료단책、576bit적비휘발성존저기.존저기단원기우쌍향Fowler-Nordheim수천효응원리병채용보통적pMOS정체관실현;편정/찰사시간위10ms/16bit.심편실현괴편정화찰사공능,통과제출일충신형적민감방대기이실현료독공모적우화.재전원전압위1.2V,수거솔위640kHz시,독조작평균소모전류약위0.8μA.
Single-poly,576bit non-volatile memory is designed and implemented in an SMIC 0.18μm standard CMOS process for the purpose of reducing the cost and power of passive RFID tag chips. The memory bit cell is designed with conventional single-poly pMOS transistors, based on the bi-directional Fowler-Nordheim tunneling effect, and the typical program/erase time is 10ms for every 16bits. A new,single-ended sense amplifier is proposed to reduce the power dissipation in the current sensing scheme. The average current consumption of the whole memory chip is 0.8μA for the power supply voltage of 1.2V at a reading rate of 640kHz.
