人工晶体学报
人工晶體學報
인공정체학보
2005年
6期
982-985,976
,共5页
孙国胜%王雷%巩全成%高欣%刘兴昉%曾一平%李晋闽
孫國勝%王雷%鞏全成%高訢%劉興昉%曾一平%李晉閩
손국성%왕뢰%공전성%고흔%류흥방%증일평%리진민
3C-SiC%LPCVD生长%Si台面%SiO2/Si
3C-SiC%LPCVD生長%Si檯麵%SiO2/Si
3C-SiC%LPCVD생장%Si태면%SiO2/Si
3 C-SiC%LPCVD growth%Si mesas%SiO2/Si
本文报道用在Si台面及热氧化SiO2衬底上3C-SiC薄膜的LPCVD生长,反应生长使用的气体为SiH4和C2H4,载气为H2,采用光学显微镜、X射线衍射(XRD)、X射线光电子能谱(XPS)、扫描电镜(SEM)、以及室温Hall测试对所生长的3C-SiC材料进行了测试与分析,结果表明在3C-SiC和SiO2之间没有明显的坑洞形成.
本文報道用在Si檯麵及熱氧化SiO2襯底上3C-SiC薄膜的LPCVD生長,反應生長使用的氣體為SiH4和C2H4,載氣為H2,採用光學顯微鏡、X射線衍射(XRD)、X射線光電子能譜(XPS)、掃描電鏡(SEM)、以及室溫Hall測試對所生長的3C-SiC材料進行瞭測試與分析,結果錶明在3C-SiC和SiO2之間沒有明顯的坑洞形成.
본문보도용재Si태면급열양화SiO2츤저상3C-SiC박막적LPCVD생장,반응생장사용적기체위SiH4화C2H4,재기위H2,채용광학현미경、X사선연사(XRD)、X사선광전자능보(XPS)、소묘전경(SEM)、이급실온Hall측시대소생장적3C-SiC재료진행료측시여분석,결과표명재3C-SiC화SiO2지간몰유명현적갱동형성.
This paper presents the development of LPCVD growth of 3C-SiC thin films grown on Si mesas and thermally oxidized SiO2 masks over Si with an area of 150 × 100μm2 and SiO2/Si substrates. The growth has been performed via chemical vapor deposition using SiH4 and C2H4 precursor gases with carrier gas of H2. 3C-SiC films on these substrates were characterized by optical microscopy, X-ray diffraction ( XRD ), X-ray photoelectron spectroscopy ( XPS), scanning electron microscopy (SEM) and room temperature Hall effect measurements. It is shown that there were no voids at the interface between 3C-SiC and SiO2.
