半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2006年
10期
1707-1710
,共4页
CMOS%峰值检测%低功耗%高频
CMOS%峰值檢測%低功耗%高頻
CMOS%봉치검측%저공모%고빈
CMOS%peak detector%lower power%high frequency
给出了一个低功耗、高频CMOS峰值检测电路,可以用于检测射频信号和基带信号的峰值.该电路的设计基于中芯国际0.35μm标准CMOS工艺.理论分析和后仿真结果都表明,在工艺偏差以及温度变化条件下,当输入信号幅度在400mV以上时检测的误差小于2%,检测带宽可达10GHz以上,整个检测电路的静态电流消耗低于20μA.
給齣瞭一箇低功耗、高頻CMOS峰值檢測電路,可以用于檢測射頻信號和基帶信號的峰值.該電路的設計基于中芯國際0.35μm標準CMOS工藝.理論分析和後倣真結果都錶明,在工藝偏差以及溫度變化條件下,噹輸入信號幅度在400mV以上時檢測的誤差小于2%,檢測帶寬可達10GHz以上,整箇檢測電路的靜態電流消耗低于20μA.
급출료일개저공모、고빈CMOS봉치검측전로,가이용우검측사빈신호화기대신호적봉치.해전로적설계기우중심국제0.35μm표준CMOS공예.이론분석화후방진결과도표명,재공예편차이급온도변화조건하,당수입신호폭도재400mV이상시검측적오차소우2%,검측대관가체10GHz이상,정개검측전로적정태전류소모저우20μA.
A low-power,high-frequency CMOS peak detector is proposed. This detector can detect RF signal and base-band signal peaks. The circuit is designed using SMIC 0.35μm standard CMOS technology. Both theoretical calculations and post simulations show that the detection error is no more than 2% for various temperatures and processes when the input amplitude is larger than 400mV. The detection bandwidth is up to 10GHz, and its static current dissipation is less than 20μA.
