CAJ | 학술논문

氧化硅薄膜是半导体工业中常见的薄膜材料,通常采用化学气相沉积方法制备.但是这种制备方法存在缺欠.采用磁控溅射的方法首先在石英衬底上制备了氧化硅薄膜.研究了射频功率、氧气含量和溅射压强对氧化硅薄膜沉积速率的影响.发现沉积速率随着射频功率的增加而增加;随着氧气含量的增加,先减小后增大;当溅射压强在0.4～0.8 Pa之间变化时,沉积速率变化很小,当溅射压强超过0.8 Pa时沉积速率迅速下降.讨论了不同生长条件下造成氧化硅薄膜生长速率变化的原因.
양화규박막시반도체공업중상견적박막재료,통상채용화학기상침적방법제비.단시저충제비방법존재결흠.채용자공천사적방법수선재석영츤저상제비료양화규박막.연구료사빈공솔、양기함량화천사압강대양화규박막침적속솔적영향.발현침적속솔수착사빈공솔적증가이증가;수착양기함량적증가,선감소후증대;당천사압강재0.4～0.8 Pa지간변화시,침적속솔변화흔소,당천사압강초과0.8 Pa시침적속솔신속하강.토론료불동생장조건하조성양화규박막생장속솔변화적원인.
Silicon oxide is one of the thin films well known in semiconductor industry. It is commonly obtained by chemical vapor deposition (CVD). For this deposition technique, the great disadvantages are high temperature and dangerous reactants as silane (SiH_4), dichlo-rosilane (SiH_2Cl_2), ammonia (NH_3). The reactive magnetron sputtering is a powerful technique for deposition of many different types of films at low deposition temperature. Some of organic (carbon), metallic (tungsten, aluminum, nickel, cobalt, etc.), semiconductor (silicon) and thin dielectric (aluminum oxide) films can commonly be obtained by this method, and furthermore, the advantage is utilization of non-toxic gases, for example, argon, oxygen and nitrogen, high-purity target (99.99%) and it is possible to obtain high deposition rate. In this paper, the silicon oxide films were deposited on quartz substrate by radio-frequency (RF) reactive magnetron sputtering method, the influences of radio-frequency power, oxygen concentration and sputtering pressure on the deposition rate of the silicon oxide film was investigated. It was found that the deposition rate increases with increasing the RF power, but firstly increases and then decreases with increasing oxygen concentration. The deposition rate changed little when the sputtering pressure changed in 0.4～0.8 Pa, and decreases drastically if the pressure is beyond 0.8 Pa. Finally, it was detailedly discused why the deposition rate of silicon oxide films at different growth condition changes.