半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2004年
11期
1349-1354
,共6页
樊志琴%张兵临%姚宁%鲁占灵%杨仕娥%马丙现
樊誌琴%張兵臨%姚寧%魯佔靈%楊仕娥%馬丙現
번지금%장병림%요저%로점령%양사아%마병현
碳纳米管膜%MWPCVD%场发射%Raman光谱
碳納米管膜%MWPCVD%場髮射%Raman光譜
탄납미관막%MWPCVD%장발사%Raman광보
carbon nanotube%MWPCVD%field emission%Raman spectroscopy
在不同预处理条件的不锈钢衬底上,利用微波等离子体化学气相沉积(MWPCVD)方法从甲烷和氢气的混合气体中沉积碳纳米管薄膜,并对其场发射性能进行了研究.实验发现,不锈钢衬底的机械抛光和酸洗,能降低碳纳米管膜的开启场强,增大它的发射电流密度.在场强为6.25V/μm时,衬底未处理样品的电流密度为1.2mA/cm2,而衬底抛光的样品和衬底抛光又酸洗的样品的电流密度分别达到3.2和2.75mA/cm2.衬底只需机械抛光,而不需要酸洗,就能改良碳纳米管膜的场发射性能.
在不同預處理條件的不鏽鋼襯底上,利用微波等離子體化學氣相沉積(MWPCVD)方法從甲烷和氫氣的混閤氣體中沉積碳納米管薄膜,併對其場髮射性能進行瞭研究.實驗髮現,不鏽鋼襯底的機械拋光和痠洗,能降低碳納米管膜的開啟場彊,增大它的髮射電流密度.在場彊為6.25V/μm時,襯底未處理樣品的電流密度為1.2mA/cm2,而襯底拋光的樣品和襯底拋光又痠洗的樣品的電流密度分彆達到3.2和2.75mA/cm2.襯底隻需機械拋光,而不需要痠洗,就能改良碳納米管膜的場髮射性能.
재불동예처리조건적불수강츤저상,이용미파등리자체화학기상침적(MWPCVD)방법종갑완화경기적혼합기체중침적탄납미관박막,병대기장발사성능진행료연구.실험발현,불수강츤저적궤계포광화산세,능강저탄납미관막적개계장강,증대타적발사전류밀도.재장강위6.25V/μm시,츤저미처리양품적전류밀도위1.2mA/cm2,이츤저포광적양품화츤저포광우산세적양품적전류밀도분별체도3.2화2.75mA/cm2.츤저지수궤계포광,이불수요산세,취능개량탄납미관막적장발사성능.
Carbon nanotubes (CNTs) are synthesized from methane and hydrogen gas mixture directly on stainless steel plates by microwave plasma chemical vapor deposition (MWPCVD).By varying pretreatment conditions of the substrates such as mechanically polishing and acid washing,it is found the polishing and acid washing can lower the turn-on field and improve the emission current density.The current density of the un-pretreated sample attains 1.2mA/cm2,but the polished sample and polished acidly washed sample attain 3.2 and 2.75mA/cm2,respectively,at the electric field of 6.25V/μm.