电子元件与材料
電子元件與材料
전자원건여재료
ELECTRONIC COMPONENTS & MATERIALS
2010年
1期
18-21
,共4页
杜锋涛%程花蕾%崔斌%畅柱国%杨爱武
杜鋒濤%程花蕾%崔斌%暢柱國%楊愛武
두봉도%정화뢰%최빈%창주국%양애무
Ba_(0.90)Sr_(0.08)Ca_(0.02)TiO_3%掺钇%细晶陶瓷%sol-gel法%介电性能
Ba_(0.90)Sr_(0.08)Ca_(0.02)TiO_3%摻釔%細晶陶瓷%sol-gel法%介電性能
Ba_(0.90)Sr_(0.08)Ca_(0.02)TiO_3%참을%세정도자%sol-gel법%개전성능
Ba_(0.90)Sr_(0.08)Ca_(0.02)TiO_3%Y~(3+)-doping%fine-grained ceramic%sol-gel method%dielectric property
采用sol-gel法制备了Y~(3+)掺杂Ba_(0.90)Sr_(0.08)Ca_(0.02)TiO_3(BSCT)纳米粉体及细晶陶瓷.通过TG-DTG、XRD、SEM和TEM对样品结构及形貌进行了表征,并测试了陶瓷的介电性能.研究表明,Y~(3+)掺杂BSCT纳米粉体主要为立方相BaTiO_3,烧结后陶瓷晶粒尺寸在0.68~2.24 μm可控,Y~(3+)掺杂可以抑制陶瓷晶粒的生长,使陶瓷的t_C向低温方向移动.随Y~(3+)掺杂量的增大,陶瓷的介电温谱ε_r - t趋于平缓,当x(Y~(3+))为7.0%时,陶瓷的室温ε_r大幅度提高到9 176.
採用sol-gel法製備瞭Y~(3+)摻雜Ba_(0.90)Sr_(0.08)Ca_(0.02)TiO_3(BSCT)納米粉體及細晶陶瓷.通過TG-DTG、XRD、SEM和TEM對樣品結構及形貌進行瞭錶徵,併測試瞭陶瓷的介電性能.研究錶明,Y~(3+)摻雜BSCT納米粉體主要為立方相BaTiO_3,燒結後陶瓷晶粒呎吋在0.68~2.24 μm可控,Y~(3+)摻雜可以抑製陶瓷晶粒的生長,使陶瓷的t_C嚮低溫方嚮移動.隨Y~(3+)摻雜量的增大,陶瓷的介電溫譜ε_r - t趨于平緩,噹x(Y~(3+))為7.0%時,陶瓷的室溫ε_r大幅度提高到9 176.
채용sol-gel법제비료Y~(3+)참잡Ba_(0.90)Sr_(0.08)Ca_(0.02)TiO_3(BSCT)납미분체급세정도자.통과TG-DTG、XRD、SEM화TEM대양품결구급형모진행료표정,병측시료도자적개전성능.연구표명,Y~(3+)참잡BSCT납미분체주요위립방상BaTiO_3,소결후도자정립척촌재0.68~2.24 μm가공,Y~(3+)참잡가이억제도자정립적생장,사도자적t_C향저온방향이동.수Y~(3+)참잡량적증대,도자적개전온보ε_r - t추우평완,당x(Y~(3+))위7.0%시,도자적실온ε_r대폭도제고도9 176.
Y~(3+)-doped Ba_(0.90)Sr_(0.08)Ca_(0.02)TiO_3(BSCT) nanopowders and fine-grained ceramics were prepared via a sol-gel method.The structure and morphology of samples were characterized by TG-DTG,XRD,SEM and TEM,and the dielectric properties of prepared ceramics were also measured.The results show that the prepared nanopowders were mainly composed of cubic BaTiO_3 phase.The grain size of prepared ceramics can be controlled between 0.68 μm and 2.24 μm.The grain growth of prepared ceramics can be inhibited and Curie temperature shifts to lower temperature.A relatively flat ε_r-t curve is obtained when the Y~(3+)-doping amount increases.ε_r of the ceramics at room temperature increases greatly to 9 176 when the x(Y~(3+)) is 7.0%.